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Germanium based field-effect transistors: Challenges and opportunities
The performance of strained silicon (Si) as the channel material for today's metal-oxide-
semiconductor field-effect transistors may be reaching a plateau. New channel materials …
semiconductor field-effect transistors may be reaching a plateau. New channel materials …
Germanium surface passivation and atomic layer deposition of high-k dielectrics—a tutorial review on Ge-based MOS capacitors
Due to its high intrinsic mobility, germanium (Ge) is a promising candidate as a channel
material (offering a mobility gain of approximately× 2 for electrons and× 4 for holes when …
material (offering a mobility gain of approximately× 2 for electrons and× 4 for holes when …
N-Channel Germanium MOSFET Fabricated Below 360 by Cobalt-Induced Dopant Activation for Monolithic Three-Dimensional-ICs
Below 360° C, we demonstrate germanium (Ge) n+/p junction diode and n-channel Ge
metal-oxide-semiconductor field-effect transistor (MOSFET) with a low temperature Al/Al 2 O …
metal-oxide-semiconductor field-effect transistor (MOSFET) with a low temperature Al/Al 2 O …
Enabling energy efficiency and polarity control in germanium nanowire transistors by individually gated nanojunctions
Germanium is a promising material for future very large scale integration transistors, due to
its superior hole mobility. However, germanium-based devices typically suffer from high …
its superior hole mobility. However, germanium-based devices typically suffer from high …
III–V/Ge channel MOS device technologies in nano CMOS era
CMOS utilizing high-mobility III–V/Ge channels on Si substrates is expected to be one of the
promising devices for high-performance and low power advanced LSIs in the future …
promising devices for high-performance and low power advanced LSIs in the future …
Hysteresis in carbon nanotube transistors: measurement and analysis of trap density, energy level, and spatial distribution
We present a measurement technique, which we call the Pulsed Time-Domain
Measurement, for characterizing hysteresis in carbon nanotube field-effect transistors, and …
Measurement, for characterizing hysteresis in carbon nanotube field-effect transistors, and …
High speed and ultra-low dark current Ge vertical pin photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation
Germanium (Ge) vertical pin photodetectors were demonstrated with an ultra-low dark
current of 0.57 mA/cm^ 2 at− 1 V. A germanium-on-insulator (GOI) platform with a 200-mm …
current of 0.57 mA/cm^ 2 at− 1 V. A germanium-on-insulator (GOI) platform with a 200-mm …
Surface passivation of germanium by atomic layer deposited Al2O3 nanolayers
Surfaces of semiconductors are notorious for the presence of electronic defects such that
passivation approaches are required for optimal performance of (opto) electronic devices …
passivation approaches are required for optimal performance of (opto) electronic devices …
Atomic layer deposition of dielectrics on Ge and III–V materials for ultrahigh performance transistors
The prospect of utilizing alternative transistor channel materials for ultrahigh performance
transistors will require suitable gate dielectrics for surface-channel field-effect devices. With …
transistors will require suitable gate dielectrics for surface-channel field-effect devices. With …
Ge (100) and (111) N- and P-FETs With High Mobility and Low- Mobility Characterization
In this paper, we demonstrate high-mobility bulk Ge N-and P-FETs with GeON gate
dielectric. The highest electron mobility to date in Ge is reported, and two times improvement …
dielectric. The highest electron mobility to date in Ge is reported, and two times improvement …