ZnO nanostructures: growth, properties and applications

AB Djurišić, X Chen, YH Leung, AMC Ng - Journal of Materials …, 2012 - pubs.rsc.org
ZnO is a material which is of great interest for a variety of applications due to its unique
properties and the availability of a variety of growth methods resulting in a number of …

ZnO nanostructures for optoelectronics: Material properties and device applications

AB Djurišić, AMC Ng, XY Chen - Progress in quantum electronics, 2010 - Elsevier
In recent years, there has been increasing interest in ZnO nanostructures due to their variety
of morphologies and availability of simple and low cost processing. While there are still …

The status and perspectives of metal oxide thin-film transistors for active matrix flexible displays

JK Jeong - Semiconductor Science and Technology, 2011 - iopscience.iop.org
The purpose of this paper is to give an overview of the state-of-the-art of metal oxide thin-film
transistors (TFTs). First, the question of how to achieve high-performance oxide TFTs is …

A review of recent applications of ion beam techniques on nanomaterial surface modification: Design of nanostructures and energy harvesting

W Li, X Zhan, X Song, S Si, R Chen, J Liu, Z Wang… - Small, 2019 - Wiley Online Library
Nanomaterials have gained plenty of research interest because of their excellent
performance, which is derived from their small size and special structure. In practical …

One-dimensional ZnO nanostructures: fabrication, optoelectronic properties, and device applications

D Panda, TY Tseng - Journal of Materials Science, 2013 - Springer
Abstract One-dimensional (1D) zinc oxide (ZnO) nanostructures have been extensively and
intensively studied for several decades not only for their extraordinary chemical and physical …

Near UV LEDs made with in situ doped pn homojunction ZnO nanowire arrays

MT Chen, MP Lu, YJ Wu, J Song, CY Lee, MY Lu… - Nano …, 2010 - ACS Publications
Catalyst-free pn homojunction ZnO nanowire (NW) arrays in which the phosphorus (P) and
zinc (Zn) served as p-and n-type dopants, respectively, have been synthesized for the first …

III–V nanowires on Si substrate: selective-area growth and device applications

K Tomioka, T Tanaka, S Hara… - IEEE Journal of …, 2010 - ieeexplore.ieee.org
III-V nanowires (NWs) on Si are promising building blocks for future nanoscale electrical and
optical devices on Si platforms. We present position-controlled and orientation-controlled …