[HTML][HTML] Recent progress in heterogeneous III-V-on-silicon photonic integration

D Liang, JE Bowers - Light: Advanced Manufacturing, 2021 - light-am.com
Silicon (Si) photonics is a disruptive technology on the fast track to revolutionise integrated
photonics. An indispensable branch thereof, heterogeneous Si integration, has also evolved …

Physics and applications of quantum dot lasers for silicon photonics

F Grillot, JC Norman, J Duan, Z Zhang, B Dong… - …, 2020 - degruyter.com
Photonic integrated circuits (PICs) have enabled numerous high performance, energy
efficient, and compact technologies for optical communications, sensing, and metrology …

[HTML][HTML] Perspective: The future of quantum dot photonic integrated circuits

JC Norman, D Jung, Y Wan, JE Bowers - APL photonics, 2018 - pubs.aip.org
Direct epitaxial integration of III-V materials on Si offers substantial manufacturing cost and
scalability advantages over heterogeneous integration. The challenge is that epitaxial …

[LLIBRE][B] Physics of semiconductors

M Grundmann - 2010 - Springer
Semiconductor electronics is commonplace in every household. Semiconductor devices
have enabled economically reasonable fiber-based optical communication, optical storage …

Comparative analysis of spasers, vertical-cavity surface-emitting lasers and surface-plasmon-emitting diodes

JB Khurgin, G Sun - Nature Photonics, 2014 - nature.com
Electrically pumped subwavelength plasmonic lasers (spasers) have attracted significant
interest in recent years, but their properties are still not well understood, especially in …

Chaotic time-delay signature suppression in a semiconductor laser with frequency-detuned grating feedback

SS Li, SC Chan - IEEE Journal of Selected Topics in Quantum …, 2015 - ieeexplore.ieee.org
Chaotic dynamics of a semiconductor laser subject to optical feedback from a frequency-
detuned fiber Bragg grating (FBG) is investigated experimentally and numerically. Although …

[HTML][HTML] Semiconductor quantum dot lasers epitaxially grown on silicon with low linewidth enhancement factor

J Duan, H Huang, D Jung, Z Zhang, J Norman… - Applied Physics …, 2018 - pubs.aip.org
This work reports on the ultra-low linewidth enhancement factor (α H-factor) of
semiconductor quantum dot lasers epitaxially grown on silicon. Owing to the low density of …

Chaotic light at mid-infrared wavelength

L Jumpertz, K Schires, M Carras… - Light: Science & …, 2016 - nature.com
The onset of nonlinear dynamics and chaos is evidenced in a mid-infrared distributed
feedback quantum cascade laser both in the temporal and frequency domains. As opposed …

Analysis of the optical feedback dynamics in InAs/GaAs quantum dot lasers directly grown on silicon

H Huang, J Duan, D Jung, AY Liu, Z Zhang, J Norman… - JOSA B, 2018 - opg.optica.org
This work reports on a systematic investigation of the influence of optical feedback in
InAs/GaAs quantum dot lasers epitaxially grown on silicon. The boundaries associated to …

Linewidth enhancement factor in InAs/GaAs quantum dot lasers and its implication in isolator-free and narrow linewidth applications

Z Zhang, D Jung, JC Norman… - IEEE Journal of …, 2019 - ieeexplore.ieee.org
The linewidth enhancement factor (α H) is an important parameter for semiconductor lasers.
In this paper, we investigate, both theoretically and experimentally, the key parameters that …