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Phonon thermal transport and its tunability in GaN for near-junction thermal management of electronics: A review
The heat dissipation issue has now become one of the most important bottlenecks for power
electronics due to the rapid increase in power density and working frequency. Towards the …
electronics due to the rapid increase in power density and working frequency. Towards the …
Bonding‐Enhanced Interfacial Thermal Transport: Mechanisms, Materials, and Applications
Rapid advancements in nanotechnologies for energy conversion and transport applications
urgently require a further understanding of interfacial thermal transport and enhancement of …
urgently require a further understanding of interfacial thermal transport and enhancement of …
High thermal conductivity in wafer-scale cubic silicon carbide crystals
High thermal conductivity electronic materials are critical components for high-performance
electronic and photonic devices as both active functional materials and thermal …
electronic and photonic devices as both active functional materials and thermal …
A critical review of thermal boundary conductance across wide and ultrawide bandgap semiconductor interfaces
The emergence of wide and ultrawide bandgap semiconductors has revolutionized the
advancement of next-generation power, radio frequency, and opto-electronics, paving the …
advancement of next-generation power, radio frequency, and opto-electronics, paving the …
Integration of boron arsenide cooling substrates into gallium nitride devices
Thermal management is critical in modern electronic systems. Efforts to improve heat
dissipation have led to the exploration of novel semiconductor materials with high thermal …
dissipation have led to the exploration of novel semiconductor materials with high thermal …
Diamond as the heat spreader for the thermal dissipation of GaN-based electronic devices
L Sang - Functional Diamond, 2022 - Taylor & Francis
With the increasing power density and reduced size of the GaN-based electronic power
converters, the heat dissipation in the devices becomes the key issue toward the real …
converters, the heat dissipation in the devices becomes the key issue toward the real …
Fabrication of GaN/diamond heterointerface and interfacial chemical bonding state for highly efficient device design
J Liang, A Kobayashi, Y Shimizu, Y Ohno… - Advanced …, 2021 - Wiley Online Library
The direct integration of gallium nitride (GaN) and diamond holds much promise for high‐
power devices. However, it is a big challenge to grow GaN on diamond due to the large …
power devices. However, it is a big challenge to grow GaN on diamond due to the large …
A review of thermoreflectance techniques for characterizing wide bandgap semiconductors' thermal properties and devices' temperatures
Thermoreflectance-based techniques, such as pump–probe thermoreflectance (pump–
probe TR) and thermoreflectance thermal imaging (TTI), have emerged as the powerful and …
probe TR) and thermoreflectance thermal imaging (TTI), have emerged as the powerful and …
Thermal Transport across Ion-Cut Monocrystalline β-Ga2O3 Thin Films and Bonded β-Ga2O3–SiC Interfaces
The ultrawide band gap, high breakdown electric field, and large-area affordable substrates
make β-Ga2O3 promising for applications of next-generation power electronics, while its …
make β-Ga2O3 promising for applications of next-generation power electronics, while its …
Thermal management of GaN HEMT devices using subcooled flow boiling in an embedded manifold microchannel heat sink
Ultra-high heat flux thermal management has been an urgent demand for high electrical
performance and reliability of GaN HEMT electronic devices, and direct fabrication of …
performance and reliability of GaN HEMT electronic devices, and direct fabrication of …