Phonon thermal transport and its tunability in GaN for near-junction thermal management of electronics: A review

DS Tang, BY Cao - International Journal of Heat and Mass Transfer, 2023 - Elsevier
The heat dissipation issue has now become one of the most important bottlenecks for power
electronics due to the rapid increase in power density and working frequency. Towards the …

Bonding‐Enhanced Interfacial Thermal Transport: Mechanisms, Materials, and Applications

XD Zhang, G Yang, BY Cao - Advanced Materials Interfaces, 2022 - Wiley Online Library
Rapid advancements in nanotechnologies for energy conversion and transport applications
urgently require a further understanding of interfacial thermal transport and enhancement of …

High thermal conductivity in wafer-scale cubic silicon carbide crystals

Z Cheng, J Liang, K Kawamura, H Zhou… - Nature …, 2022 - nature.com
High thermal conductivity electronic materials are critical components for high-performance
electronic and photonic devices as both active functional materials and thermal …

A critical review of thermal boundary conductance across wide and ultrawide bandgap semiconductor interfaces

T Feng, H Zhou, Z Cheng, LS Larkin… - ACS applied materials …, 2023 - ACS Publications
The emergence of wide and ultrawide bandgap semiconductors has revolutionized the
advancement of next-generation power, radio frequency, and opto-electronics, paving the …

Integration of boron arsenide cooling substrates into gallium nitride devices

JS Kang, M Li, H Wu, H Nguyen, T Aoki, Y Hu - Nature Electronics, 2021 - nature.com
Thermal management is critical in modern electronic systems. Efforts to improve heat
dissipation have led to the exploration of novel semiconductor materials with high thermal …

Diamond as the heat spreader for the thermal dissipation of GaN-based electronic devices

L Sang - Functional Diamond, 2022 - Taylor & Francis
With the increasing power density and reduced size of the GaN-based electronic power
converters, the heat dissipation in the devices becomes the key issue toward the real …

Fabrication of GaN/diamond heterointerface and interfacial chemical bonding state for highly efficient device design

J Liang, A Kobayashi, Y Shimizu, Y Ohno… - Advanced …, 2021 - Wiley Online Library
The direct integration of gallium nitride (GaN) and diamond holds much promise for high‐
power devices. However, it is a big challenge to grow GaN on diamond due to the large …

A review of thermoreflectance techniques for characterizing wide bandgap semiconductors' thermal properties and devices' temperatures

C Yuan, R Hanus, S Graham - Journal of Applied Physics, 2022 - pubs.aip.org
Thermoreflectance-based techniques, such as pump–probe thermoreflectance (pump–
probe TR) and thermoreflectance thermal imaging (TTI), have emerged as the powerful and …

Thermal Transport across Ion-Cut Monocrystalline β-Ga2O3 Thin Films and Bonded β-Ga2O3–SiC Interfaces

Z Cheng, F Mu, T You, W Xu, J Shi… - … Applied Materials & …, 2020 - ACS Publications
The ultrawide band gap, high breakdown electric field, and large-area affordable substrates
make β-Ga2O3 promising for applications of next-generation power electronics, while its …

Thermal management of GaN HEMT devices using subcooled flow boiling in an embedded manifold microchannel heat sink

W Tang, J Li, J Lu, K Sheng, Z Wu, X Li - Applied Thermal Engineering, 2023 - Elsevier
Ultra-high heat flux thermal management has been an urgent demand for high electrical
performance and reliability of GaN HEMT electronic devices, and direct fabrication of …