We report on systematic measurements of resonant plasma waves oscillations in several
gate-length InGaAs high electron mobility transistors (HEMTs) and compare them with …

We present a hydrodynamic model to simulate the excitation by optical beating of plasma
waves in nanometric field effect transistors. The biasing conditions are whatever possible …

A photomixed laser beam of two 1.55 μm continuous-wave (CW) lasers is used for interband
photoexcitation in submicron gate length InAlAs/InGaAs transistors. Results show the clear …

Despite the advantages of semiconductor field-effect transistors (FETs), they have yet to
show competing responses in terahertz (THz) radiation detection compared to other …

In modern FET/HEMT structures the Gunn-effect is not usually considered as one of the
mechanisms able to realize high-frequency (near terahertz (THz)) oscillations of the current …

One-dimensional approximation of Poisson equation for the description of multi-gate conducting
channels of FETs and HEMTs Page 1 This content has been downloaded from IOPscience …

Terahertz (THz) detection technology has become increasingly significant over the past few
decades in a variety of fields, including security and industrial imaging, space exploration …

Abstract The results of Monte Carlo simulation of GaAs MOSFETs under impact ionization
conditions in the conduction channel are presented. The main attention is paid to the …

Plasma waves induced by the optical beating in HEMT channels as an expected source of
TeraHertz radiation generation Page 1 Plasma waves induced by the optical beating in HEMT …

MOSFET resonant detection on terahertz radiation under the optical exciting mode is studied
in this paper. The fundamental harmonic resonance frequency of plasma waves in …