Two-dimensional devices and integration towards the silicon lines
Despite technical efforts and upgrades, advances in complementary metal–oxide–
semiconductor circuits have become unsustainable in the face of inherent silicon limits. New …
semiconductor circuits have become unsustainable in the face of inherent silicon limits. New …
Quantum‐Engineered Devices Based on 2D Materials for Next‐Generation Information Processing and Storage
As an approximation to the quantum state of solids, the band theory, developed nearly
seven decades ago, fostered the advance of modern integrated solid‐state electronics, one …
seven decades ago, fostered the advance of modern integrated solid‐state electronics, one …
Homojunction-loaded inverters based on self-biased molybdenum disulfide transistors for sub-picowatt computing
As transistors are scaled to smaller dimensions, their static power increases. Combining two-
dimensional (2D) channel materials with complementary metal–oxide–semiconductor …
dimensional (2D) channel materials with complementary metal–oxide–semiconductor …
Reliability Improvement and Effective Switching Layer Model of Thin‐Film MoS2 Memristors
Abstract 2D memristors have demonstrated attractive resistive switching characteristics
recently but also suffer from the reliability issue, which limits practical applications. Previous …
recently but also suffer from the reliability issue, which limits practical applications. Previous …
Biaxial tensile strain enhances electron mobility of monolayer transition metal dichalcogenides
Strain engineering can modulate the properties of two-dimensional (2D) semiconductors for
electronic and optoelectronic applications. Recent theory and experiments have found that …
electronic and optoelectronic applications. Recent theory and experiments have found that …
Three-dimensional transistors with two-dimensional semiconductors for future CMOS scaling
Atomically thin two-dimensional (2D) semiconductors—particularly transition metal
dichalcogenides—are potential channel materials for post-silicon complementary metal …
dichalcogenides—are potential channel materials for post-silicon complementary metal …
Two-dimensional dielectrics for future electronics: Hexagonal boron nitride, oxyhalides, transition-metal nitride halides, and beyond
WG Vandenberghe… - ACS Applied Electronic …, 2023 - ACS Publications
Recent developments in the field of two-dimensional (2D) van der Waals (vdW) dielectrics
have captured great interest because of potential applications of 2D materials in future …
have captured great interest because of potential applications of 2D materials in future …
An ultra energy-efficient hardware platform for neuromorphic computing enabled by 2D-TMD tunnel-FETs
Brain-like energy-efficient computing has remained elusive for neuromorphic (NM) circuits
and hardware platform implementations despite decades of research. In this work we reveal …
and hardware platform implementations despite decades of research. In this work we reveal …
Accessing electronic properties of two-dimensional materials with gate-dependent micro four-point probe
M Introna, J Bogdanowicz, HM Silva, S Banerjee… - 2D …, 2024 - iopscience.iop.org
The attractive properties of 2D materials and transition metal dichalcogenides hold great
potential for their use in future, ultra-scaled electronic applications. Although growth …
potential for their use in future, ultra-scaled electronic applications. Although growth …
Evolution of Raman and photoluminescence spectral characteristics of monolayer CVD-MoS2 over a wide temperature range
In this study, the temperature-dependent characteristics of monolayer MoS 2 flakes
produced by chemical vapor deposition (CVD) are examined at temperatures ranging from …
produced by chemical vapor deposition (CVD) are examined at temperatures ranging from …