In-memory computing with emerging memory devices: Status and outlook

P Mannocci, M Farronato, N Lepri, L Cattaneo… - APL Machine …, 2023 - pubs.aip.org
In-memory computing (IMC) has emerged as a new computing paradigm able to alleviate or
suppress the memory bottleneck, which is the major concern for energy efficiency and …

Multi-level resistive switching in hafnium-oxide-based devices for neuromorphic computing

M Hellenbrand, J MacManus-Driscoll - Nano Convergence, 2023 - Springer
In the growing area of neuromorphic and in-memory computing, there are multiple reviews
available. Most of them cover a broad range of topics, which naturally comes at the cost of …

Exploring the Cutting‐Edge Frontiers of Electrochemical Random Access Memories (ECRAMs) for Neuromorphic Computing: Revolutionary Advances in Material‐to …

RD Nikam, J Lee, K Lee, H Hwang - Small, 2023 - Wiley Online Library
Advanced materials and device engineering has played a crucial role in improving the
performance of electrochemical random access memory (ECRAM) devices. ECRAM …

3D Stackable Vertical‐Sensing Electrochemical Random‐Access Memory Using Ion‐Permeable WS2 Electrode for High‐Density Neuromorphic Systems

K Lee, S Hwang, D Kim, J Yoon… - Advanced Functional …, 2024 - Wiley Online Library
Ion‐based electrochemical random‐access memory (ECRAM) is proposed for synaptic
applications owing to its promising characteristics that have the potential to accelerate data …

Electrochemical random-access memory: recent advances in materials, devices, and systems towards neuromorphic computing

H Kwak, N Kim, S Jeon, S Kim, J Woo - Nano Convergence, 2024 - Springer
Artificial neural networks (ANNs), inspired by the human brain's network of neurons and
synapses, enable computing machines and systems to execute cognitive tasks, thus …

Computing of neuromorphic materials: an emerging approach for bioengineering solutions

C Prakash, LR Gupta, A Mehta, H Vasudev… - Materials …, 2023 - pubs.rsc.org
The potential of neuromorphic computing to bring about revolutionary advancements in
multiple disciplines, such as artificial intelligence (AI), robotics, neurology, and cognitive …

[HTML][HTML] Prospects and challenges of electrochemical random-access memory for deep-learning accelerators

J Cui, H Liu, Q Cao - Current Opinion in Solid State and Materials Science, 2024 - Elsevier
The ever-expanding capabilities of machine learning are powered by exponentially growing
complexity of deep neural network (DNN) models, requiring more energy and chip-area …

Impact of Oxygen Reservoir Layer on 3T Oxygen Ion‐based Electrochemical Random Access Memory Performance

H Kim, G Han, J Seo, D Lee - Advanced Electronic Materials, 2023 - Wiley Online Library
This study investigates the impact of an oxygen reservoir layer on the performance of three‐
terminal (3T) oxide ion‐based electrochemical random access memory (Ox‐ECRAM). Three …

Electrochemical Ionic Synapses with Mg2+ as the Working Ion

M Schwacke, P Žguns, J del Alamo… - Advanced Electronic …, 2024 - Wiley Online Library
Dynamic do** by electrochemical ion intercalation is a promising mechanism for
modulating electronic conductivity, allowing for energy‐efficient, brain‐inspired computing …

Temperature-dependent time relaxation of ON and OFF states in NiO-based crossbar memory arrays

HS Alagoz, M Egilmez, J Jung, KH Chow - Applied Physics A, 2022 - Springer
The time-dependence of ON and OFF switching states in Pt/NiO x/Pt crossbar devices was
measured between 300 K and 180 K. We find that the OFF-state resistance increases with …