In the past ten years, heteroepitaxy has continued to increase in importance with the
explosive growth of the electronics industry and the development of a myriad of …

The GaAs-based material system is well-known for hosting InAs quantum dots (QDs) with
outstanding optical properties, typically emitting at a wavelength of around 900 nm. The …

In order to evaluate various buffer layers for metamorphic devices, threading dislocation
densities have been calculated for uniform composition In x Ga 1− x As device layers …

The understanding of lattice relaxation and dislocation dynamics in lattice-mismatched
semiconductors makes it possible to design metamorphic device structures utilizing the …

We have investigated the evolution of strain and threading dislocation density in
metamorphic temperature-graded ZnSe buffer layers. Mismatched semiconductor …

Plastic flow models for lattice relaxation in II–VI heterostructures have increased in
sophistication, including thermal strains as well as dislocation multiplication, annihilation …

Metamorphic semiconductor devices often contain abrupt mismatched interfaces with
relatively high densities of misfit dislocations. For such mismatched structures there is …

The design of metamorphic buffer layers for semiconductor devices with reduced defect
densities requires control of lattice relaxation and dislocation dynamics. Graded layers are …

The extent of strain relaxation in semiconducting device heterostructures has important
implications in the design of high electron mobility transistors, light-emitting diodes, and …

Several simple models have been developed for the threading dislocation behavior in
heteroepitaxial semiconductor materials. Tachikawa and Yamaguchi [Appl. Phys. Lett., 56 …