Effect of illumination intensity on the characteristics of Cu (acac) 2/n-Si photodiode
H Abdel-Khalek, E Shalaan, M Abd-El Salam… - Synthetic Metals, 2018 - Elsevier
Thermally evaporated copper (II) acetylacetonate Cu (acac) 2 thin film deposited on the n-Si
wafer was used for light detection. The microstructural properties of copper (II) …
wafer was used for light detection. The microstructural properties of copper (II) …
The photodetection properties of a ruthenium electro-optic device for organic material-based device industry
The electrical properties and effect of illumination on the photodetection properties were
investigated for the fabricated device with Ru (II)-pydim complex interface layer. The Ru (II) …
investigated for the fabricated device with Ru (II)-pydim complex interface layer. The Ru (II) …
Small Molecule Based Organic Photo Signal Receiver for High‐Speed Optical Wireless Communications
The present work describes the development of an organic photodiode (OPD) receiver for
high‐speed optical wireless communication. To determine the optimal communication …
high‐speed optical wireless communication. To determine the optimal communication …
Silicon based photodetector with Ru (II) complexes organic interlayer
In present work, the electrical properties and illumination effects were investigated for the
silicon based photodetector with organic Ru (II) complexes interfacial layer. The current …
silicon based photodetector with organic Ru (II) complexes interfacial layer. The current …
Influence of illumination intensity on electrical characteristics of Eosin y dye-based hybrid photodiode: comparative study
We reported the optoelectronic performance of organic/inorganic hybrid junction photodiode
based on Eosin y/silicon (Si). For this purpose, we fabricated Eosin y/n-Si and Eosin y/p-Si …
based on Eosin y/silicon (Si). For this purpose, we fabricated Eosin y/n-Si and Eosin y/p-Si …
Photodiode performance and infrared light sensing capabilities of quaternary Cu2ZnSnS4 chalcogenide
In this study, quaternary Cu 2 ZnSnS 4 chalcogenide nanocrystal compound prepared by
hydrothermal method was coated on Si with the help of spin coating technique to be used as …
hydrothermal method was coated on Si with the help of spin coating technique to be used as …
The current-voltage characteristics of the ferroelectric p-YMnO3 thin film/bulk p-Si heterojunction over a broad measurement temperature range
The reverse and forward bias IV characteristics of the Al/p-YMO/p-Si/Al heterojunction were
measured at room temperature (RT) and over temperature range, from 50 to 320 K, and the …
measured at room temperature (RT) and over temperature range, from 50 to 320 K, and the …
Photosensing properties of ruthenium (II) complex-based photodiode
Abstract Ru (II) complex containing 2, 6-di (1 H-pyrazol-3-yl) pyridine ligand was
synthesized to prepare organic-based photodiode. After forming the back contact with …
synthesized to prepare organic-based photodiode. After forming the back contact with …
Investigation on UV photoresponsivity of main electrical properties of Au/CuO-PVA/n-Si MPS type Schottky barrier diodes (SBDs)
GE Demir - Physica B: Condensed Matter, 2021 - Elsevier
In this study,(CuO doped PVA) composite material was deposited using spin coating
technique on n-Si and the Au/CuO-PVA/n-Si Metal/Polymer/Semiconductor type Schottky …
technique on n-Si and the Au/CuO-PVA/n-Si Metal/Polymer/Semiconductor type Schottky …
Electrical, photoconductive, and photovoltaic characteristics of a Bi2Se3 3D topological insulator based metal-insulator-semiconductor diode
A metal-insulator-semiconductor (MIS) diode based on the Bi 2 Se 3 3D topological insulator
on p-Si substrate was fabricated for use as a photodiode with the Al/p-Si/Bi 2 Se 3/Al …
on p-Si substrate was fabricated for use as a photodiode with the Al/p-Si/Bi 2 Se 3/Al …