With the development of wearable devices and hafnium-based ferroelectrics (FE), there is
an increasing demand for high-performance flexible ferroelectric memories. However …

The AI and IoT era requires software and hardware capable of efficiently processing
massive amounts data quickly and at a low cost. However, there are bottlenecks in existing …

As emerging technologies like artificial intelligence (AI) and big data continue to evolve, the
demand for high-performance computing (HPC) has been increasing, driving the …

The HfxZr1− xO2 (HZO) based ferroelectric field-effect transistors (FeFETs) with oxide
semiconductor channel have been proposed to have the potential of interface layer (IL) free …

In this brief, we report that HfO 2–ZrO 2 superlattice (SL) ferroelectric field-effect transistors
(FeFETs) demonstrate improved endurance, fatigue recovery, and retention performance …

In this study, we investigate the impact of nitridation in Hf Zr O2-based ferroelectric field-
effect transistors (FeFETs) with a SiON interfacial layer (IL). We fabricated the SiON IL using …

In this article, we demonstrate a low-thermal budget defect-engineered process to achieve
top-gated (TG) oxide–semiconductor ferroelectric field-effect transistors (FeFETs). The …

This article presents a comprehensive physics-based model for back-end-of-line (BEOL)-
compatible oxide-semiconductor-based ferroelectric field-effect transistors (FeFETs). The …

In this letter, we systematically investigate the impact of randomly distributed
ferroelectric/interlayer (FE/IL) and interlayer/oxide-semiconductor (IL/OS) interface traps …

We demonstrate a gate-all-around (GAA) nanosheet FET featuring an atomic layer-
deposited (ALD) tungsten (W)-doped indium oxide (In 2 O 3), or indium tungsten oxide …