In this work, a systematic photoluminescence (PL) study on three series of gallium
oxide/aluminum gallium oxide films and bulk single crystals is performed including …

Abstract Integrating two-dimensional (2D) layered materials with wide bandgap β-Ga2O3
has unveiled impressive opportunities for exploring novel physics and device concepts. This …

The UV–vis photodetector (PD), a detector that can simultaneously detect light in the
ultraviolet region and the visible region, has a wide range of applications in military and …

In this work, a deep-UV photodetector based on a Sn-doped Ga2O3 (Sn: Ga2O3) thin film
grown by mist chemical vapor deposition (mist-CVD) technology on an α-Al2O3 substrate is …

Abstract High-quality (100)-oriented β-Ga 2 O 3 films were successfully grown on (110) TiO
2 substrates by metalorganic chemical vapor deposition (MOCVD) for the first time. Crystal …

Addressing microstructural domain disorders within epitaxial β-Ga 2 O 3 is critical for phase
engineering and property improvement, whereas the associated evolution of β-Ga 2 O 3 …

Abstract β-phase gallium oxide (β-Ga 2 O 3) is attracting attention as a deep—ultraviolet
photodetector (PD) owing to its large band gap of 4.9 eV, almost direct band gap …

In this Letter, self-reaction etching (SRE) with Ga flux demonstrates the capability of
eliminating surface contaminations and damage, as well as improving the electrical …

In our study, β-Ga 2 O 3 particles of various morphologies deposited on FTO glass
substrates through hydrothermal method under different pH conditions and pre-stirring …

In this study, the Si-ions implantation technique with different doses from 1× 10 14 to 1× 10
15 cm− 2 and dose energy 30, 40 and 50 keV was used to tune the electrical properties in …