Spintronic heterostructures for artificial intelligence: A materials perspective
With the advent of the Big Data era, neuromorphic computing (NC)(also known as brain‐
inspired computing) has gained a lot of research interest. Spintronic devices are the …
inspired computing) has gained a lot of research interest. Spintronic devices are the …
Spin–orbit torques based on topological materials
Conspectus Widespread applications of magnetic devices, such as magnetic random-
access memory (MRAM), logic-in memory, and neuromorphic computing devices, require an …
access memory (MRAM), logic-in memory, and neuromorphic computing devices, require an …
Field‐free spin‐orbit torque switching of perpendicular magnetization by making full use of spin Hall effect
Field‐free switching is a critical issue for spin‐orbit torque‐induced magnetic random‐
access memory (SOT‐MRAM) with perpendicular magnetic anisotropic (PMA) towards …
access memory (SOT‐MRAM) with perpendicular magnetic anisotropic (PMA) towards …
Side-jump scattering enhanced spin Hall effect in SrTiO3-implanted Pt
Z Lin, X Xu, L Zhang, J Wei, Z Zhong, X Tang… - Applied Physics …, 2023 - pubs.aip.org
A spin Hall effect (SHE) enables the electrical generation and detection of spin currents for
promising applications in spintronics, but heavy metals with low spin Hall angle θ SH limit …
promising applications in spintronics, but heavy metals with low spin Hall angle θ SH limit …
Enhanced Spin-Orbit-Torque Efficiency in Multilayers by Insertion of an or Layer
Q ** next-generation
magnetic random-access memory (MRAM). For efficient utilization of the SOT MRAM, most …
magnetic random-access memory (MRAM). For efficient utilization of the SOT MRAM, most …
[HTML][HTML] Emerging materials for spin–charge interconversion
This Special Topic collection is focused on the fast-growing field of electronic materials and
structures in which spin and charge can be converted from one to the other through …
structures in which spin and charge can be converted from one to the other through …
Enhancing Spin–Orbit Torque Efficiency via Optimizing Pt‐Based Multilayers
Spin–orbit torque (SOT) efficiencies are systematically investigated in [Pt (tPt)/Ru (1− tPt)]
10/Pt (0.8 nm)/Co multilayer systems with perpendicular magnetic anisotropy and in‐plane …
10/Pt (0.8 nm)/Co multilayer systems with perpendicular magnetic anisotropy and in‐plane …
Enhanced Spin–Orbit Torque Performances in PtRu–Co–PtRu–Ni–Ru-Based Spintronic Devices
The Pt80Ru20 alloy has been testified to be a satisfying heavy metal layer (HM) in spin–orbit
torque (SOT)-induced spintronic devices with a relatively high-spin Hall angle (θ DL) and a …
torque (SOT)-induced spintronic devices with a relatively high-spin Hall angle (θ DL) and a …
Enhanced Field‐Like Torque Generated from the Anisotropic Spin‐Split Effect in Triple‐Domain RuO2 for Energy‐Efficient Spin–Orbit Torque Magnetic Random …
TVA Nguyen, H Naganuma, TNH Vu, S DuttaGupta… - Advanced … - Wiley Online Library
Spin‐current generation via the anisotropic spin‐split effect has been predicted in
antiferromagnetic RuO2, where the symmetry of RuO2 plays a critical role in spin–orbit …
antiferromagnetic RuO2, where the symmetry of RuO2 plays a critical role in spin–orbit …
Maximizing Competing Spin Current of the W/Pt/ferromagnet Devices with Spin-Torque Ferromagnetic Resonance Analysis
Using spin-torque ferromagnetic resonance (ST-FMR), we investigated the spin-orbit torque
(SOT) arising from the competing spin current (CSC) effect within a W/Pt/ferromagnet …
(SOT) arising from the competing spin current (CSC) effect within a W/Pt/ferromagnet …