Diamond with an ultra-wide bandgap shows intrinsic performance that is extraordinarily
superior to those of the currently available wide-bandgap semiconductors for deep …

The emergence of wide and ultrawide bandgap semiconductors has revolutionized the
advancement of next-generation power, radio frequency, and opto-electronics, paving the …

High thermal conductivity electronic materials are critical components for high-performance
electronic and photonic devices as both active functional materials and thermal …

The implementation of 5G-and-beyond networks requires faster, high-performance, and
power-efficient semiconductor devices, which are only possible with materials that can …

The wide bandgap, high-breakdown electric field, and high carrier mobility makes GaN an
ideal material for high-power and high-frequency electronics applications, such as wireless …

This review highlights recent advances in machine learning (ML)‐assisted design of energy
materials. Initially, ML algorithms were successfully applied to screen materials databases …

Over the past few decades, significant progress has been made in micro-and nanoscale
heat transfer. Numerous computational methods have been developed to quantitatively …

Wurtzite AlN is an ultrawide bandgap semiconductor that has been developed for
applications including power electronics and optoelectronics. Thermal management of these …

The ultrawide band gap, high breakdown electric field, and large-area affordable substrates
make β-Ga2O3 promising for applications of next-generation power electronics, while its …

High-power GaN-based electronics are limited by high channel temperatures induced by
self-heating, which degrades device performance and reliability. Increasing the thermal …