Processing at the atomic scale is becoming increasingly critical for state-of-the-art electronic
devices for computing and data storage, but also for emerging technologies such as related …

One field of organometallic and materials chemistry that has seen great advancements over
the last 20 years is that of atomic layer deposition (ALD), and in particular the development …

Phenol is one of the most widespread, toxic and recalcitrant compounds in water sources.
Due to its persistent nature, conventional wastewater treatment methods are not effective to …

Zinc oxide (ZnO) has been regarded as one of the most promising candidate for efficient UV
light emitted devices owing to its unique optical properties, such as direct wide band-gap …

Abstract Luminescent properties of ZnO/TiO 2, ZnO/HfO 2, and ZnO/ZrO 2 core/shell hybrid
nanotubes (NTs) with the shell thickness varying between 9 and 40 nm were studied. The …

The continuous device scaling of dynamic random access memories has been increasing
demands for the development of dielectric materials with high dielectric constants and low …

This research reports on the atomic layer deposition (ALD) mechanism of MgO thin film
using bis (cyclopentadienyl) magnesium [Mg (Cp) 2] as the Mg-precursor and O3 or H2O as …

Magnesium oxide (MgO) films have been prepared by plasma enhanced atomic layer
deposition with bis (cyclopentadienyl) magnesium precursor and oxygen plasma reactant at …

A method to conformally coat silica nanosprings with magnesium via sublimation at 450° C
has been developed. In addition, Mg thin films were grown on Si (100) using this method to …

In this study, we comparatively investigated thermal-and plasma-enhanced atomic layer
deposition (Th-and PE-ALD) of MgO on a CoFeB layer. MgCp 2 (Bis (cyclopentadienyl) …