In this paper, the role of pad topography on material removal rate (MRR) in chemical-
mechanical polishing (CMP) is investigated. First, based on the mechanics of pad/particle …

This study investigated the effects of particle size and pH of SiO 2-based slurry on chemical
mechanical polishing for SiO 2 film. It was found that the removal rates and surface …

The present study deals with the formation and characterization of Cu− benzotriazole (BTA)
nanoparticles, which are relevant to copper surface corrosion and passivation. More …

Chemical mechanical planarization (CMP) is a vital process for smoothing and polishing the
surfaces of various material layers in the semiconductor device fabrication. CMP slurries …

Abstract 4H-SiC has been widely exploited in semiconductor industry. Nevertheless, the
scratch-free surface with less oxide layer (required for its high-performance) is difficult to …

In this work, a new aluminum gate chemical mechanical planarization (CMP) model for
material removal rate (MRR) is proposed in high-k metal gate (HKMG) process. Using the …

Scratch formation on patterned oxide wafers during the chemical mechanical planarization
process was investigated. Silica and ceria slurries were used for polishing the experiments …

Chemical mechanical polishing (CMP) is widely adopted in producing excellent local and
global planarization of microelectronic devices. However, the fundamental mechanisms of …

The polishing pad plays a vital role in achieving the desired removal rates and level of
surface planarity during the chemical mechanical planarization (CMP) process. Generally …

Highly branched structure has the essential influence on macromolecular property and
functionality in physics and chemistry. In this work, we proposed a diffusion-limited reaction …