Monolithically integrated, active photonic devices on Si are key components in Si-based
large-scale electronic-photonic integration for future generations of high-performance, low …

Silicon photonics is considered as one of the promising technologies for high-speed optical
fiber communications. Among various silicon photonic devices, germanium on silicon …

In this work we study, using experiments and theoretical modeling, the mechanical and
optical properties of tensile strained Ge microstructures directly fabricated in a state-of-the …

The monolithic integration of III-V compound semiconductor devices with silicon presents
physical and technological challenges, linked to the creation of defects during the deposition …

Ge vertical heterostructures grown on deeply-patterned Si (001) were first obtained in 2012
(CV Falub et al., Science 2012, 335, 1330–1334), immediately capturing attention due to the …

The epitaxial growth of Ge and GeSn alloys on Si (100) by Reduced Pressure Chemical
Vapor Deposition is discussed. Particular emphasis is placed on the growth kinetics in the …

Among the many anticipated applications of graphene, some–such as transistors for Si
microelectronics–would greatly benefit from the possibility to deposit graphene directly on a …

Representing a further step towards enabling the convergence of computing and
communication, this handbook and reference treats germanium electronics and optics on an …

Due to their compatibility with standard Si CMOS technology, Ge (or SiGe) heterostructures
on Si (001) play an important role in modern information and communications technology …

The influence of annealing conditions on the crystallinity of Ge deposited on Si (001) is
investigated. Ge deposited with postannealing at 800 C and 850 C, five cycles of …