[HTML][HTML] Hall measurements on low-mobility thin films

F Werner - Journal of Applied Physics, 2017 - pubs.aip.org
We review the conventional measuring standard for dc Hall measurements in van der Pauw
configuration with particular focus on the challenges arising from a small Hall signal …

Electronic properties of TaAs2 topological semimetal investigated by transport and ARPES

AS Wadge, G Grabecki, C Autieri… - Journal of Physics …, 2022 - iopscience.iop.org
Electronic properties of TaAs2 topological semimetal investigated by transport and ARPES -
IOPscience This site uses cookies. By continuing to use this site you agree to our use of cookies …

Experimental Demonstration of Room-Temperature Spin Transport in -Type Germanium Epilayers

S Dushenko, M Koike, Y Ando, T Shinjo, M Myronov… - Physical review …, 2015 - APS
We report an experimental demonstration of room-temperature spin transport in n-type Ge
epilayers grown on a Si (001) substrate. By utilizing spin pum** under ferromagnetic …

Electron mobility, Hall scattering factor, and sheet conductivity in AlGaN/AlN/GaN heterostructures

A Asgari, S Babanejad, L Faraone - Journal of Applied Physics, 2011 - pubs.aip.org
In this paper, we present a study of the effect of temperature on the two-dimensional electron
mobility, Hall scattering factor, and sheet conductivity, using a fully numerical calculation in …

Determination of the parameters of multi-carrier spectrum in CdHgTe. I. A review of mobility spectrum analysis methods

II Izhnin, AV Voitsekhovskii, AG Korotaev… - Russian Physics …, 2023 - Springer
The paper consisting of two parts presents a detailed consideration of the proposed method
of discrete mobility spectrum analysis and its application for studying the parameters of …

Maximum entropy mobility spectrum analysis of HgCdTe heterostructures

J Rothman, J Meilhan, G Perrais, JP Belle… - Journal of electronic …, 2006 - Springer
We report on mobility spectrum analysis of p-type HgCdTe using a new maximum entropy
algorithm termed full MEMSA (f-MEMSA). The algorithm is the first that separates the …

Application of Bryan's algorithm to the mobility spectrum analysis of semiconductor devices

D Chrastina, JP Hague, DR Leadley - Journal of applied physics, 2003 - pubs.aip.org
A powerful method for mobility spectrum analysis is presented, based on Bryan's maximum
entropy algorithm. The Bayesian analysis central to Bryan's algorithm ensures that we avoid …

High-resolution mobility spectrum analysis of multicarrier transport in advanced infrared materials

J Antoszewski, GA Umana-Membreno… - Journal of electronic …, 2012 - Springer
In this paper the recently developed high-resolution mobility spectrum analysis is
demonstrated. In a number of simulations the high resolution of the algorithm is …

Origin of conductive surface layer in annealed ZnO

DC Look, B Claflin, HE Smith - Applied Physics Letters, 2008 - pubs.aip.org
The highly conductive surface layers found in nearly all as-grown or annealed bulk ZnO
wafers are studied by temperature-dependent Hall-effect and secondary-ion mass …

Application of quantitative mobility-spectrum analysis to multilayer HgCdTe structures

J Antoszewski, L Faraone, I Vurgaftman… - Journal of electronic …, 2004 - Springer
For modern semiconductor heterostructures containing multiple populations of distinct
carrier species, conventional Hall and resistivity data acquired at a single magnetic field …