[HTML][HTML] Hall measurements on low-mobility thin films
F Werner - Journal of Applied Physics, 2017 - pubs.aip.org
We review the conventional measuring standard for dc Hall measurements in van der Pauw
configuration with particular focus on the challenges arising from a small Hall signal …
configuration with particular focus on the challenges arising from a small Hall signal …
Electronic properties of TaAs2 topological semimetal investigated by transport and ARPES
Electronic properties of TaAs2 topological semimetal investigated by transport and ARPES -
IOPscience This site uses cookies. By continuing to use this site you agree to our use of cookies …
IOPscience This site uses cookies. By continuing to use this site you agree to our use of cookies …
Experimental Demonstration of Room-Temperature Spin Transport in -Type Germanium Epilayers
We report an experimental demonstration of room-temperature spin transport in n-type Ge
epilayers grown on a Si (001) substrate. By utilizing spin pum** under ferromagnetic …
epilayers grown on a Si (001) substrate. By utilizing spin pum** under ferromagnetic …
Electron mobility, Hall scattering factor, and sheet conductivity in AlGaN/AlN/GaN heterostructures
A Asgari, S Babanejad, L Faraone - Journal of Applied Physics, 2011 - pubs.aip.org
In this paper, we present a study of the effect of temperature on the two-dimensional electron
mobility, Hall scattering factor, and sheet conductivity, using a fully numerical calculation in …
mobility, Hall scattering factor, and sheet conductivity, using a fully numerical calculation in …
Determination of the parameters of multi-carrier spectrum in CdHgTe. I. A review of mobility spectrum analysis methods
II Izhnin, AV Voitsekhovskii, AG Korotaev… - Russian Physics …, 2023 - Springer
The paper consisting of two parts presents a detailed consideration of the proposed method
of discrete mobility spectrum analysis and its application for studying the parameters of …
of discrete mobility spectrum analysis and its application for studying the parameters of …
Maximum entropy mobility spectrum analysis of HgCdTe heterostructures
J Rothman, J Meilhan, G Perrais, JP Belle… - Journal of electronic …, 2006 - Springer
We report on mobility spectrum analysis of p-type HgCdTe using a new maximum entropy
algorithm termed full MEMSA (f-MEMSA). The algorithm is the first that separates the …
algorithm termed full MEMSA (f-MEMSA). The algorithm is the first that separates the …
Application of Bryan's algorithm to the mobility spectrum analysis of semiconductor devices
A powerful method for mobility spectrum analysis is presented, based on Bryan's maximum
entropy algorithm. The Bayesian analysis central to Bryan's algorithm ensures that we avoid …
entropy algorithm. The Bayesian analysis central to Bryan's algorithm ensures that we avoid …
High-resolution mobility spectrum analysis of multicarrier transport in advanced infrared materials
J Antoszewski, GA Umana-Membreno… - Journal of electronic …, 2012 - Springer
In this paper the recently developed high-resolution mobility spectrum analysis is
demonstrated. In a number of simulations the high resolution of the algorithm is …
demonstrated. In a number of simulations the high resolution of the algorithm is …
Origin of conductive surface layer in annealed ZnO
DC Look, B Claflin, HE Smith - Applied Physics Letters, 2008 - pubs.aip.org
The highly conductive surface layers found in nearly all as-grown or annealed bulk ZnO
wafers are studied by temperature-dependent Hall-effect and secondary-ion mass …
wafers are studied by temperature-dependent Hall-effect and secondary-ion mass …
Application of quantitative mobility-spectrum analysis to multilayer HgCdTe structures
J Antoszewski, L Faraone, I Vurgaftman… - Journal of electronic …, 2004 - Springer
For modern semiconductor heterostructures containing multiple populations of distinct
carrier species, conventional Hall and resistivity data acquired at a single magnetic field …
carrier species, conventional Hall and resistivity data acquired at a single magnetic field …