III–V nanowires (NWs) have been envisioned as nanoscale materials for next-generation
technology with good functionality, superior performance, high integration ability and low …

▪ Abstract As a result of their fully quantized electronic states and high radiative efficiencies,
self-assembled quantum dots have enabled major advances in fundamental physics studies …

Self-assembled semiconductor quantum dots (QDs) exhibit fully quantized electronic states
and high radiative efficiencies. This makes them highly suitable both for fundamental …

The effects of a thin GaAsSb strain-reducing layer on the optical properties of In As∕ Ga As
quantum dots (QDs) are investigated. With increasing Sb composition, the room-temperature …

In order to fulfil the requirements of the information society there is a growing demand for
nanoelectronic devices with new or largely improved performances; these devices are …

It is demonstrated that the emission of InAs quantum dots (QDs) capped with GaAsSb can be
extended from 1.28 to 1.6 μ m by increasing the Sb composition of the cap** layer from …

We present a complete study both by experiments and by model calculations of quantum dot
strain engineering, by which a few optical properties of quantum dot nanostructures can be …

In this single work to cover the use of plasma as nanofabrication tool in sufficient depth
internationally renowned authors with much experience in this important method of …

We report on a photoluminescence and photoreflectance study of metamorphic InAs/InGaAs
quantum dot strain-engineered structures with and without additional InAlAs barriers …

InAs/InGaAs dot-in-well (DWELL) structures have been investigated with the systematically
varied InGaAs thickness. Both the strained buffer layer (SBL) below the dot layer and the …