The process of impurity‐induced layer disordering (IILD) or layer intermixing, in Al x Ga1− x
As‐GaAs quantum well heterostructures (QWHs) and superlattices (SLs), and in related III‐V …

This article reviews recent progresses in our understanding of the mechanisms of Ga self-
diffusion and impurity diffusion in GaAs, and of the disordering of GaAs/AlGaAs …

The outstanding features associated with Zn and Be diffusion in GaAs substrates and
GaAs/AlGaAs superlattices are explained either quantitatively or semiquantitatively using …

Recently available Ga-AI interdiffusion results in GaAsl AlAs superlattices anow us to
conclude that Ga self-diffusion in GaAs is carried by triply negatively charged Ga vacancies …

The technique of ion‐induced quantum‐well (QW) intermixing using broad area, high
energy (2–8 MeV As4+) ion implantation has been studied in a graded‐index separate …

The influence of ion mass and dose on the intermixing of GaAs/GaAlAs quantum‐well
structures using photoluminescence (PL) and secondary‐ion‐mass spectroscopy (SIMS) …

This paper reports recent progress in our understanding of mechanisms of gallium self-
diffusion, of impurity diffusion, and of do**-enhanced superlattice disordering in GaAs. An …

A study is presented of MeV ion beam amorphization of epitaxial superlattices of GeSi‐Si
and GaAs‐AlAs. In both superlattice systems, we observe preferential damage of one layer …

Recent experiments have shown that quantum well structures grown on a GaAs substrate
can be destroyed by dopant diffusion. It is observed that existing models proposed to explain …

The response of Al x Ga1− x As/GaAs samples to bombardment with heavy ions (50 keV
Kr+, 50 keV and 1.5 MeV Xe+) was studied as a function of ion dose at temperatures of 30 …