Ferroelectric polarization induced memristive behavior in bismuth ferrite (BiFeO3) based memory devices
Abstract Bismuth ferrite (BiFeO 3, BFO) thin films of various thickness were deposited using
spray pyrolysis technique at 673 K. The structural studies of the prepared BFO thin films …
spray pyrolysis technique at 673 K. The structural studies of the prepared BFO thin films …
Fabrication and characterization of resistive random access memory (ReRAM) devices using molybdenum trioxide (MoO3) as switching layer
The present study reports on the fabrication of non-volatile resistive switching (RS) memory
device using MoO 3 layers. Using a spray pyrolysis technique, different thicknesses of MoO …
device using MoO 3 layers. Using a spray pyrolysis technique, different thicknesses of MoO …
Resistive switching polarity reversal due to ferroelectrically induced phase transition at BiFeO3/Ca0. 96Ce0. 04MnO3 heterostructures
Ferroelectric resistive switching (RS) devices with functional oxide electrodes allow
controlled emergent phenomena at an interface. Here, we demonstrate RS polarity reversal …
controlled emergent phenomena at an interface. Here, we demonstrate RS polarity reversal …
Memristive behavior of mixed oxide nanocrystal assemblies
Recent advances in memristive nanocrystal assemblies leverage controllable colloidal
chemistry to induce a broad range of defect-mediated electrochemical reactions, switching …
chemistry to induce a broad range of defect-mediated electrochemical reactions, switching …
Three-state resistive switching effect in BiFeO3 thin films
Y Yang, Y Zhang, L Yang, J Lu, G Deng, Y Wang… - Physica …, 2022 - iopscience.iop.org
Resistive switching (RS) memristor has been widely used in the in-memory computation
systems. Due to the strong information processing capability and low area cost of the ternary …
systems. Due to the strong information processing capability and low area cost of the ternary …
Wake-up effect in Hf0. 4Zr0. 6O2 ferroelectric thin-film capacitors under a cycling electric field
Y Li, H Zhu, R Li, J Liu, J **ang, N **e… - Chinese …, 2022 - iopscience.iop.org
We examined the wake-up effect in a TiN/Hf 0.4 Zr 0.6 O 2/TiN structure. The increased
polarization was affected by the cumulative duration of a switched electric field and the …
polarization was affected by the cumulative duration of a switched electric field and the …
[PDF][PDF] Influence of the external field and temperature on the temporal evolution of the leakage current in the BiFeO3/TiO2 (Nt) Ti film structure
GM Gadzhiev, SM Ramazanov… - Physics of the Solid …, 2024 - researchgate.net
The behavior of leakage currents of the BiFeO3/TiO2 (Nt) film structure has been studiedTi
(BFOT) obtained by atomic layer deposition of bismuth ferrite on a substrate of pre-prepared …
(BFOT) obtained by atomic layer deposition of bismuth ferrite on a substrate of pre-prepared …
Large domain-wall currents in epitaxial Au/BiFeO3/SrRuO3 thin-film capacitors with modulated oxygen vacancy and wall densities
Q Peng, X Jiang, Y Chen, W Zhang, J Jiang… - Ceramics International, 2021 - Elsevier
Large domain wall (DW) conductivity in an insulating ferroelectric plays an important role in
the future nanosensors and nonvolatile memories. However, the wall current was usually too …
the future nanosensors and nonvolatile memories. However, the wall current was usually too …
[HTML][HTML] Enhancement of the switchable diode effect by the surface hydroxylation of ferroelectric oxide thin films
T Li, Y Yang, Y Zhang, M Pei, Y Yang, Y Tian, J Wu… - AIP Advances, 2020 - pubs.aip.org
The diode behavior of ferroelectric materials was shown to be enhanced using aqueous
solution treatment of their surface. The electric current increased for both BaTiO 3 and BiFeO …
solution treatment of their surface. The electric current increased for both BaTiO 3 and BiFeO …