The effects of H on the interaction between Ga vacancies V Ga and N in GaAs 1− x N x dilute
alloys are studied through first-principles total-energy calculations. We find that N binds to …

Using a wide range of annealing conditions and a combination of optical and structural
characterizations, we have been able to discriminate the different mechanisms at the origin …

Compositional diffusion at interfaces often occurs during the synthesis of heterostructures,
which poses a significant challenge to the reliability and performance of heterostructure …

We present the 1.55 μm GaInNAs/GaAs multiple quantum well (QW) heterostructures with a
GaNAs or a GaInNAs barrier and space layer (BSL). The stronger improvement of …

GaAs-based dilute nitride lasers are potential light sources for future optical fiber
communication systems at the wavelength of 1.3/spl mu/m. In this paper we discuss the …

The effects of thermal annealing on Ga In As∕ Ga As and Ga In As N∕ Ga As quantum
wells, grown by molecular beam epitaxy, were investigated. Optical and structural properties …

The paper reports on recent observations of structural and optical properties of long-
wavelength GaInNAs/GaAs quantum well semiconductors and the performance features of …

Structural and optical properties of GaInNAs/GaAs quantum structures grown by
metalorganic vapour phase epitaxy (MOVPE) are studied. The growth of arsenide–nitrides …

Transmission electron microscopy (TEM) is used to determine the composition of quaternary
(Ga, In)(N, As) quantum wells (QWs). Through a combined analysis of the chemically …

InGaAsN/GaAs 3-QWs with different well widths of 3, 5 and 9nm were grown in one wafer.
By studying the thermal annealing and photoluminescence (PL), we observed that,(1) the …