thin-film transistors (TFTs) for highly sensitive biosensing applications: a review

A Kumar, AK Goyal, N Gupta - … Journal of Solid State Science and …, 2020‏ - iopscience.iop.org
This review manuscript presents Thin-Film Transistors (TFTs) for various highly sensitive
biosensing applications. A low-cost, highly sensitive, early-stage diagnostic bio-sensing …

Analog and RF performance evaluation of junctionless accumulation mode (JAM) gate stack gate all around (GS-GAA) FinFET

B Kumar, R Chaujar - Silicon, 2021‏ - Springer
This work presents the analog and RF performance evaluation of Junctionless Accumulation
Mode (JAM) Gate Stack Gate All Around (GS-GAA) FinFET, and the results acquired have …

Effect of ITC's on linearity and distortion performance of Junctionless tunnel field effect transistor

B Awadhiya, S Pandey, K Nigam… - Superlattices and …, 2017‏ - Elsevier
This paper presents an extensive survey on impact of interface trap charges on JLTFET.
Objective of our work is to analyze degradation in performance of our device due to …

TCAD temperature analysis of gate stack gate all around (GS-GAA) FinFET for improved RF and wireless performance

B Kumar, R Chaujar - Silicon, 2021‏ - Springer
In this article, we investigated the impact of temperature variation on DC, analog, RF, and
wireless performance of Gate Stack Gate All Around (GS-GAA) FinFET using SILVACO Atlas …

Design and investigation of a novel charge plasma-based core-shell ring-TFET: analog and linearity analysis

AK Gupta, A Raman, N Kumar - IEEE Transactions on Electron …, 2019‏ - ieeexplore.ieee.org
A novel device architecture charge plasmabased Ring-TFET (CP-RingTFET) has been
described in this work. The ring structure of the proposed device uses a coreshell …

Performance evaluation of linearity and intermodulation distortion of nanoscale GaN-SOI FinFET for RFIC design

A Kumar, N Gupta, SK Tripathi, MM Tripathi… - … -International Journal of …, 2020‏ - Elsevier
This work presents, performance evaluation of linearity and intermodulation distortion of
novel nanoscale Gallium Nitride (GaN) Silicon-on-Insulator (SOI) N-channel FinFET (n …

Gate electrode work function engineered JAM-GS-GAA FinFET for analog/RF applications: Performance estimation and optimization

B Kumar, M Sharma, R Chaujar - Microelectronics Journal, 2023‏ - Elsevier
In this study, the gate electrode work function engineered Junctionless Accumulation Mode
Gate Stack Gate All Around (JAM-GS-GAA) FinFET has been rigorously investigated for …

Sensitivity analysis of biomolecule nanocavity immobilization in a dielectric modulated triple-hybrid metal gate-all-around junctionless NWFET biosensor for detecting …

M Getnet, R Chaujar - Journal of Electronic Materials, 2022‏ - Springer
In this paper, a novel biomolecule nanocavity immobilization in a dielectric modulated triple-
hybrid metal gate-all-around (THM-GAA) junctionless (JL) NWFET has been proposed to …

Numerical study of JAM-GS-GAA FinFET: a Fin aspect ratio optimization for upgraded analog and intermodulation distortion performance

B Kumar, R Chaujar - Silicon, 2022‏ - Springer
This paper optimizes the fin aspect ratio (AR) of Junctionless Accumulation Mode Gate Stack
Gate All Around (JAM-GS-GAA) FinFET with constant conducting channel area for upgraded …

Reliability Issues of In2O5Sn Gate Electrode Recessed Channel MOSFET: Impact of Interface Trap Charges and Temperature

A Kumar, MM Tripathi, R Chaujar - IEEE Transactions on …, 2018‏ - ieeexplore.ieee.org
In this paper, reliability issues of In2O5Sn (indium-tin oxide: a transparent material)
transparent gate recessed channel (TGRC)-MOSFET has been analyzed by considering the …