This paper will review emerging non-volatile memory (NVM) technologies, with the focus on
phase change memory (PCM), spin-transfer-torque random-access-memory (STTRAM) …

This review article attempts to provide a comprehensive review of the recent progress in the
so-called resistive random access memories (RRAMs). First, a brief introduction is presented …

Resistive switching (RS) phenomena are reversible changes in the metastable resistance
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …

Numerous candidates attempting to replace Si-based flash memory have failed for a variety
of reasons over the years. Oxide-based resistance memory and the related memristor have …

This review article introduces resistive switching processes that are being considered for
nanoelectronic nonvolatile memories. The three main classes are based on an …

Many metal–insulator–metal systems show electrically induced resistive switching effects
and have therefore been proposed as the basis for future non-volatile memories. They …

The emergence of new nonvolatile memory (NVM) technologies—such as phase change
memory, resistive, and spin-torque-transfer magnetic RAM—has been motivated by exciting …

Issues in the circuitry, integration, and material properties of the two‐dimensional (2D) and
three‐dimensional (3D) crossbar array (CBA)‐type resistance switching memories are …

This review article summarized the recent understanding of resistance switching (RS)
behavior in several binary oxide thin film systems. Among the various RS materials and …

In the advancement of the semiconductor device technology, ZnO could be a prospective
alternative than the other metal oxides for its versatility and huge applications in different …