Synthesis and applications of III–V nanowires
E Barrigón, M Heurlin, Z Bi, B Monemar… - Chemical …, 2019 - ACS Publications
Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …
dimensional examples, have developed into one of the most intensely studied fields of …
Review on III–V semiconductor nanowire array infrared photodetectors
Z Li, Z He, C ** a suitable solid …
Topochemical synthesis of copper phosphide nanoribbons for flexible optoelectronic memristors
Metal phosphide nanoribbons are suitable building blocks for flexible photoelectronic
microdevices due to the special electronic structure, large contact area, and excellent …
microdevices due to the special electronic structure, large contact area, and excellent …
Bottom-up, chip-scale engineering of low threshold, multi-quantum-well microring lasers
Integrated, on-chip lasers are vital building blocks in future optoelectronic and nanophotonic
circuitry. Specifically, III–V materials that are of technological relevance have attracted …
circuitry. Specifically, III–V materials that are of technological relevance have attracted …
Trap** layers prevent dopant segregation and enable remote do** of templated self-assembled InGaAs Nanowires
Selective area epitaxy is a promising approach to define nanowire networks for topological
quantum computing. However, it is challenging to concurrently engineer nanowire …
quantum computing. However, it is challenging to concurrently engineer nanowire …
An overview of modeling approaches for compositional control in III–V ternary nanowires
ED Leshchenko, VG Dubrovskii - Nanomaterials, 2023 - mdpi.com
Modeling of the growth process is required for the synthesis of III–V ternary nanowires with
controllable composition. Consequently, new theoretical approaches for the description of …
controllable composition. Consequently, new theoretical approaches for the description of …
Nanowire photodetectors based on wurtzite semiconductor heterostructures
Using nanowires for photodetection constitutes an opportunity to enhance the absorption
efficiency while reducing the electrical cross-section of the device. Nanowires present …
efficiency while reducing the electrical cross-section of the device. Nanowires present …
Intersubband quantum disc-in-nanowire photodetectors with normal-incidence response in the long-wavelength infrared
Semiconductor nanowires have great potential for realizing broadband photodetectors
monolithically integrated with silicon. However, the spectral range of such detectors has so …
monolithically integrated with silicon. However, the spectral range of such detectors has so …