Abstract The Weyl antiferromagnet Mn 3 Sn has been recently attracting considerable
attention due to its unique properties like a large anomalous Hall effect (AHE). To gain AHE …

We studied MgO barrier magnetic tunnel junctions (MTJs) comprising perpendicularly
magnetized MnGa and FeCoB electrodes. In those perpendicular (p-) MTJs, we utilized thin …

Spin‐polarized first‐principles calculations are carried out to study the structural, electronic,
and magnetic properties of the MnN growth on the CrN (111) surface. Different magnetic …

Mn 3 Ga-based ferrimagnets have emerged as a promising platform for energy-efficient
spintronics. However, the challenge of identifying an appropriate substrate with minimal …

Abstract Pt 2 MnGa, a tetragonal Heusler alloy with interesting magnetic properties, is
gaining interest from the scientific community due to its potential applications in the …

Efficient spintronic devices based on thin films need a full spin polarization at Fermi energy,
ultralow magnetic dam**, and magnetization perpendicular to the film plane. Co 2 Mn Si …

We report the effects of nitrogen diffusion on exchange bias in MnN/CoFeB heterostructures
as a function of MnN thickness and field-annealing temperature. We find that competing …

Pressure engineering has attracted growing interest in the understanding of structural
changes and structure-property relations of layered materials. In this study, we investigated …

Heusler alloys are distinctive functional materials related to the phase transitions due to the
strong magnetic and structural coupling. By the epitaxial strain from the rigid substrates …

Spintronic-based magnetic random-access memory (MRAM) implementing the tunnel
magnetoresistance (TMR) effect has various advantages over conventional semiconductor …