This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …

Strontium titanate is a wide-gap semiconductor avoiding a ferroelectric instability thanks to
quantum fluctuations. This proximity leads to strong screening of static Coulomb interaction …

Surfaces and interfaces offer new possibilities for tailoring the many-body interactions that
dominate the electrical and thermal properties of transition metal oxides,,,. Here, we use the …

This year marks the 20th anniversary of the discovery of LaAlO3/SrTiO3 (LAO/STO) oxide
heterointerfaces. Since their discovery, transition metal oxide (TMO) interfaces have …

Dislocations are 1D crystallographic line defects and are usually seen as detrimental to the
functional properties of classic semiconductors. It is shown here that this not necessarily …

BaSnO 3 (BSO) is a promising transparent conducting oxide with reported room-temperature
(RT) Hall mobility exceeding 320 cm 2 V− 1 s− 1. Among perovskite oxides, it has the …

In materials with strong electron-phonon (e-ph) interactions, the electrons carry a phonon
cloud during their motion, forming quasiparticles known as polarons. Predicting charge …

Numerous of the greatest inventions in modern society, such as solar cells, display panels,
and transistors, rely on a simple concept: An external stimulus is applied to a material and …

Quantum materials (QMs) with strong correlation and nontrivial topology are indispensable
to next-generation information and computing technologies. Exploitation of topological band …

Charge transport in doped quantum paraelectrics (QPs) presents a number of puzzles,
including a pronounced T 2 regime in the resistivity. We analyze charge transport in a QP …