Metal halide perovskites (MHPs) have emerged as a frontrunner semiconductor technology
for application in third generation photovoltaics while simultaneously making significant …

Two-dimensional (2D) transition metal dichalcogenides (TMDs) and their heterostructures
have attracted significant interest in both academia and industry because of their unusual …

While there has been growing interest in two-dimensional (2-D) crystals other than
graphene, evaluating their potential usefulness for electronic applications is still in its infancy …

The present invention is related to a method for manufacturing a low defect interface
between a dielectric material and an III-V compound. More specifically, the present invention …

Methods to extract trap densities at high-permittivity (k) dielectric/III-V semiconductor
interfaces and their distribution in the semiconductor band gap are compared. The …

Over the past several years, the inherent scaling limitations of silicon (Si) electron devices
have fuelled the exploration of alternative semiconductors, with high carrier mobility, to …

One of the major challenges facing the rapidly growing field of two-dimensional (2D)
transition metal dichalcogenides (TMDCs) is the development of growth techniques to …

CMOS miniaturization is now approaching the sub-10 nm level, and further downscaling is
expected. This size scaling will end sooner or later, however, because the typical size is …

The performance of strained silicon (Si) as the channel material for today's metal-oxide-
semiconductor field-effect transistors may be reaching a plateau. New channel materials …

Germanium possesses higher electron and hole mobilities than silicon. There is a big leap,
however, between these basic material parameters and implementation for high …