Miniature light-driven nanophotonic electron acceleration and control
Dielectric laser accelerators (DLAs) are fundamentally based on the interaction of photons
with free electrons, where energy and momentum conservation are satisfied by mediation of …
with free electrons, where energy and momentum conservation are satisfied by mediation of …
Recent progress on micro-and nanoparticles of gallium-based liquid metals: From preparation to applications
Gallium-based liquid metals are an attractive material for various applications, due to their
excellent features such as high electrical and thermal conductivity, low toxicity, and low …
excellent features such as high electrical and thermal conductivity, low toxicity, and low …
Efficient separation and recovery of valuable gallium and indium from gallium-based liquid metal waste
Z Li, Z Chen, W Ma, C Cai, S Li, Y Wang - Journal of Cleaner Production, 2023 - Elsevier
Considering gallium-based liquid metal (G-LM) waste as a kind of hazardous waste, it may
pose a serious threat to the surrounding environment and human health if it improperly …
pose a serious threat to the surrounding environment and human health if it improperly …
Temperature dependence of β-Ga2O3 heteroepitaxy on c-plane sapphire using low pressure chemical vapor deposition
Abstract β-Ga 2 O 3 has drawn significant attention for power electronics and deep
ultraviolet (UV) photodetector applications owing to its wide bandgap of~ 4.4–4.9 eV and …
ultraviolet (UV) photodetector applications owing to its wide bandgap of~ 4.4–4.9 eV and …
Solution processed In2O3/IGO heterojunction thin film transistors with high carrier concentration
Nowadays, high-quality metal oxide thin film transistors grown by solution process have the
most potential to replace the traditional a-Si TFT as the next generation of transparent …
most potential to replace the traditional a-Si TFT as the next generation of transparent …
[HTML][HTML] P-type conductive Ga2O3 epilayers grown on sapphire substrate by phosphorus-ion implantation technology
RH Horng, XY Tsai, FG Tarntair, JM Shieh… - Materials Today …, 2023 - Elsevier
This study utilized various phosphorus-ion implantation techniques, incorporating low,
medium, and high doses, to investigate the electrical properties of unintentionally doped β …
medium, and high doses, to investigate the electrical properties of unintentionally doped β …
Ultrafast laser material damage simulation—a new look at an old problem
The chirped pulse amplification technique has enabled the generation of pulses of a few
femtosecond duration with peak powers multi-Tera and Peta–Watt in the near infrared. Its …
femtosecond duration with peak powers multi-Tera and Peta–Watt in the near infrared. Its …
Temperature enhanced responsivity and speed in an AlGaN/GaN metal-heterostructure-metal photodetector
An AlGaN/GaN metal-heterostructure-metal (MHM) ultraviolet (UV) photodetector employing
lateral Schottky contacts was fabricated and characterized at different temperatures. As the …
lateral Schottky contacts was fabricated and characterized at different temperatures. As the …
Unraveling optical degradation mechanism of β-Ga2O3 by Si4+ irradiation: A combined experimental and first-principles study
Wide bandgap β-Ga 2 O 3 is an ideal candidate material with broad application prospects
for power electronic components in the future. Aiming at the application requirements of β …
for power electronic components in the future. Aiming at the application requirements of β …
Monolithic Epitaxial Integration of β-Ga2O3 with 100 Si for Deep Ultraviolet Photodetectors
In this report, we demonstrate direct epitaxial integration of β-Ga2O3 on a (400) oriented
silicon on insulator substrate toward deep-UV (DUV) optoelectronics. The 550 nm thick …
silicon on insulator substrate toward deep-UV (DUV) optoelectronics. The 550 nm thick …