Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …

In the past decade, atomic layer deposition (ALD) has become an important thin film
deposition technique for applications in nanoelectronics, catalysis, and other areas due to its …

Advances in the fabrication of multicomponent oxide thin films are crucial to prepare specific
compositions with precise structures and controlled interfaces. This will enable the …

Atomic layer deposition (ALD) is a technique for depositing thin films of materials with a
precise thickness control and uniformity using the self-limitation of the underlying reactions …

In this work heteroepitaxial stabilization with nanoscale control of the magnetic Co2FeO4
phase at 250° C is reported. Ultrasmooth and pure Co2FeO4 thin films (5–25 nm) with no …

This study investigates the use of atomic layer deposition (ALD) to mitigate multipacting
phenomena inside superconducting radio frequency cavities used in particle accelerators …

Abstract In current work, Ni-Ti-CeO 2 nanocomposite coatings were achieved by co-adding
Ti microparticles and CeO 2 nanoparticles. Designed experiments and COMSOL computer …

Ln2O3 thin films with optically active f-electrons (Ln= Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, Yb)
have been grown on Si (100) and soda lime glass substrates by atomic layer deposition …

Atomic layer deposition (ALD) has become an essential tool to fabricate high-quality thin-film
materials with atomic-level control. Early ALD studies mostly focused on binary metal oxides …

La 2 O 3 films were grown on Si substrates by atomic layer deposition technique with
different thickness. Crystallization characteristics of the La 2 O 3 films were analyzed by …