Nonvolatile memory device having resistance change structure
JH Han - US Patent 11,508,741, 2022 - Google Patents
(57) ABSTRACT A nonvolatile memory device according to an embodiment includes a
substrate having an upper surface, a gate line structure disposed over the substrate, a gate …
substrate having an upper surface, a gate line structure disposed over the substrate, a gate …
Low-voltage flash memory integrated with a vertical field effect transistor
B Hekmatshoartabari, A Reznicek, T Ando… - US Patent …, 2022 - Google Patents
A circuit may include a low-voltage flash memory integrated with a vertical field effect
transistor and a non-volatile memory element. The low-voltage flash memory may be …
transistor and a non-volatile memory element. The low-voltage flash memory may be …
Pulsing synaptic devices based on phase-change memory to increase the linearity in weight update
2021-06-22 Assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION
reassignment INTERNATIONAL BUSINESS MACHINES CORPORATION ASSIGNMENT OF …
reassignment INTERNATIONAL BUSINESS MACHINES CORPORATION ASSIGNMENT OF …
Resistive element for PCM RPU by trench depth patterning
GM Cohen - US Patent 11,211,556, 2021 - Google Patents
Resistive elements for PCM RPUs and techniques for fab rication thereof using trench depth
pattering are provided. In one aspect, an RPU device includes: a first electrode; a second …
pattering are provided. In one aspect, an RPU device includes: a first electrode; a second …