In this letter, we demonstrated an AlN/GaN metal-insulator-semiconductor high electron
mobility transistor (MISHEMT) on a Si substrate with in-situ SiN as gate dielectric with …

Device surface properties are critical for its performance such as channel electron density,
leakage current, subthreshold swing (SS), and noise in gallium nitride high-electron-mobility …

In this work, low voltage RF power capability on AlGaN/GaN and InAlN/GaN HEMTs is
analyzed from the perspective of DC and pulse characteristics, for terminal applications …

In this brief, a scaled In Al/GaN high-electron-mobility transistor (HEMT) was fabricated on
sapphire substrate with 47-nm-gate length, 300-nm source–drain distance, and selective …

We report an 80 nm gate-length In 0.17 Al 0.83 N/GaN high-electron mobility transistor
(HEMT) on silicon substrate with a record low gate leakage current of 7.12× 10− 7 A mm− 1 …