Resistive memories are outstanding electron devices that have displayed a large potential in
a plethora of applications such as nonvolatile data storage, neuromorphic computing …

Brain-inspired computing enabled by memristors has gained prominence over the years due
to the nanoscale footprint and reduced complexity for implementing synapses and neurons …

In the continuous downscaling of device features, the microelectronics industry is facing the
intrinsic limits of conventional lithographic techniques. The development of new synthetic …

The use of trivalent erbium (Er3+), typically embedded as an atomic defect in the solid-state,
has widespread adoption as a dopant in telecommunication devices and shows promise as …

The filament growth processes, crucial to the performance of nanodevices like resistive
switching memories, have been widely investigated to realize the device optimization. With …

In this work, block copolymer lithography and ultralow energy ion implantation are combined
to obtain nanovolumes with high concentrations of phosphorus atoms periodically disposed …

Conductive-bridging random access memory (CBRAM) has garnered attention as a building
block of non–von Neumann architectures because of scalability and parallel processing on …

A wide array of models, spanning from computationally expensive ab initio methods to a
spectrum of force-field approaches, have been developed and employed to probe silica …

Memristors are emerging as promising candidates for practical application in reservoir
computing systems that are capable of temporal information processing. Here, we …

Nanostructured organic templates originating from self-assembled block copolymers (BCPs)
can be converted into inorganic nanostructures by sequential infiltration synthesis (SIS). This …