Memristive crossbar arrays for storage and computing applications

H Li, S Wang, X Zhang, W Wang… - Advanced Intelligent …, 2021 - Wiley Online Library
The emergence of memristors with potential applications in data storage and artificial
intelligence has attracted wide attentions. Memristors are assembled in crossbar arrays with …

25 nm CMOS omega FETs

FL Yang, HY Chen, FC Chen, CC Huang… - Digest. International …, 2002 - ieeexplore.ieee.org
Low leakage and low active-power 25 nm gate length C-MOSFETs are demonstrated for the
first time with a newly proposed Omega-(/spl Omega/) shaped structure, at a conservative 17 …

Operational and reliability comparison of discrete-storage nonvolatile memories: Advantages of single-and double-layer metal nanocrystals

C Lee, A Gorur-Seetharam… - IEEE International Electron …, 2003 - ieeexplore.ieee.org
Aggressive scaling of EEPROM to below 1,000 nm/sup 2/bit area will enable more
applications as low-power mobile systems. We have performed a critical comparison on …

CMOS compatible process integration of SOT-MRAM with heavy-metal bi-layer bottom electrode and 10ns field-free SOT switching with STT assist

N Sato, GA Allen, WP Benson, B Buford… - … IEEE Symposium on …, 2020 - ieeexplore.ieee.org
This paper demonstrates a CMOS compatible process integration of spin-orbit torque (SOT)
device with a unique bi-layer SOT bottom electrode. An effective spin-Hall angle of 0.27, a …

Heterogeneous integration enabled by the state-of-the-art 3DIC and CMOS technologies: design, cost, and modeling

XW Lin, V Moroz, X Xu, Y Gao, D Rennie… - 2021 IEEE …, 2021 - ieeexplore.ieee.org
Heterogeneous integration (HI) opens up a new dimension to improve system-level
functionality, performance, power, form factor, and cost. Both 3DIC interconnect and …

First 80 nm SON (silicon-on-nothing) MOSFETs with perfect morphology and high electrical performance

S Monfray, T Skotnicki, Y Morand… - … Digest (Cat. No …, 2001 - ieeexplore.ieee.org
In this paper, the first 80 nm SON MOSFETs are presented, demonstrating the electrical
viability of the SON architecture. The transistors have a 20 nm thick Si-film channel, isolated …

High-Speed Ternary CMOS Inverter by Monolithic Integration of NbO2 Threshold Switch with MOSFET

S Heo, J Lee, S Lee, S Lee, C Lee… - 2021 IEEE …, 2021 - ieeexplore.ieee.org
To realize a step-shaped ternary transistor capable of high-speed operation, NbO 2
threshold switch (TS) device was integrated on the drain side of the conventional MOSFET …

An electroforming-free mechanism for cu 2 o solid-electrolyte-based conductive-bridge random access memory (cbram)

KH Kwon, DW Kim, HJ Kim, SM **, DS Woo… - Journal of Materials …, 2020 - pubs.rsc.org
In a CuxO solid-electrolyte-based CBRAM cell using an Ag top electrode, electroforming-
free and electro-reset processes could be achieved at a specific ex situ annealing …

SiGe and GaAs as competitive technologies for RF-applications

U Konig - Proceedings of the 1998 Bipolar/BiCMOS Circuits …, 1998 - ieeexplore.ieee.org
The status of SiGe HBTs is reviewed and related to III/V HBTs and HFETs. Figures of merit
considered are DC performance (gains, Gummel plot), frequencies (f/sub T/, f/sub max/) …

SiGe devices and circuits: where are advantages over III/V?

U Konig, A Gruhle, A Schuppen - GaAs IC Symposium IEEE …, 1995 - ieeexplore.ieee.org
SiGe devices are just on an upswing due to their compatibility with existing silicon
technologies. Outstanding SiGe ICs manufactured at high integration levels, high volume …