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Memristive crossbar arrays for storage and computing applications
The emergence of memristors with potential applications in data storage and artificial
intelligence has attracted wide attentions. Memristors are assembled in crossbar arrays with …
intelligence has attracted wide attentions. Memristors are assembled in crossbar arrays with …
25 nm CMOS omega FETs
FL Yang, HY Chen, FC Chen, CC Huang… - Digest. International …, 2002 - ieeexplore.ieee.org
Low leakage and low active-power 25 nm gate length C-MOSFETs are demonstrated for the
first time with a newly proposed Omega-(/spl Omega/) shaped structure, at a conservative 17 …
first time with a newly proposed Omega-(/spl Omega/) shaped structure, at a conservative 17 …
Operational and reliability comparison of discrete-storage nonvolatile memories: Advantages of single-and double-layer metal nanocrystals
C Lee, A Gorur-Seetharam… - IEEE International Electron …, 2003 - ieeexplore.ieee.org
Aggressive scaling of EEPROM to below 1,000 nm/sup 2/bit area will enable more
applications as low-power mobile systems. We have performed a critical comparison on …
applications as low-power mobile systems. We have performed a critical comparison on …
CMOS compatible process integration of SOT-MRAM with heavy-metal bi-layer bottom electrode and 10ns field-free SOT switching with STT assist
N Sato, GA Allen, WP Benson, B Buford… - … IEEE Symposium on …, 2020 - ieeexplore.ieee.org
This paper demonstrates a CMOS compatible process integration of spin-orbit torque (SOT)
device with a unique bi-layer SOT bottom electrode. An effective spin-Hall angle of 0.27, a …
device with a unique bi-layer SOT bottom electrode. An effective spin-Hall angle of 0.27, a …
Heterogeneous integration enabled by the state-of-the-art 3DIC and CMOS technologies: design, cost, and modeling
XW Lin, V Moroz, X Xu, Y Gao, D Rennie… - 2021 IEEE …, 2021 - ieeexplore.ieee.org
Heterogeneous integration (HI) opens up a new dimension to improve system-level
functionality, performance, power, form factor, and cost. Both 3DIC interconnect and …
functionality, performance, power, form factor, and cost. Both 3DIC interconnect and …
First 80 nm SON (silicon-on-nothing) MOSFETs with perfect morphology and high electrical performance
S Monfray, T Skotnicki, Y Morand… - … Digest (Cat. No …, 2001 - ieeexplore.ieee.org
In this paper, the first 80 nm SON MOSFETs are presented, demonstrating the electrical
viability of the SON architecture. The transistors have a 20 nm thick Si-film channel, isolated …
viability of the SON architecture. The transistors have a 20 nm thick Si-film channel, isolated …
High-Speed Ternary CMOS Inverter by Monolithic Integration of NbO2 Threshold Switch with MOSFET
To realize a step-shaped ternary transistor capable of high-speed operation, NbO 2
threshold switch (TS) device was integrated on the drain side of the conventional MOSFET …
threshold switch (TS) device was integrated on the drain side of the conventional MOSFET …
An electroforming-free mechanism for cu 2 o solid-electrolyte-based conductive-bridge random access memory (cbram)
KH Kwon, DW Kim, HJ Kim, SM **, DS Woo… - Journal of Materials …, 2020 - pubs.rsc.org
In a CuxO solid-electrolyte-based CBRAM cell using an Ag top electrode, electroforming-
free and electro-reset processes could be achieved at a specific ex situ annealing …
free and electro-reset processes could be achieved at a specific ex situ annealing …
SiGe and GaAs as competitive technologies for RF-applications
U Konig - Proceedings of the 1998 Bipolar/BiCMOS Circuits …, 1998 - ieeexplore.ieee.org
The status of SiGe HBTs is reviewed and related to III/V HBTs and HFETs. Figures of merit
considered are DC performance (gains, Gummel plot), frequencies (f/sub T/, f/sub max/) …
considered are DC performance (gains, Gummel plot), frequencies (f/sub T/, f/sub max/) …
SiGe devices and circuits: where are advantages over III/V?
U Konig, A Gruhle, A Schuppen - GaAs IC Symposium IEEE …, 1995 - ieeexplore.ieee.org
SiGe devices are just on an upswing due to their compatibility with existing silicon
technologies. Outstanding SiGe ICs manufactured at high integration levels, high volume …
technologies. Outstanding SiGe ICs manufactured at high integration levels, high volume …