Resistive random access memory (RRAM) devices are receiving increasing extensive
attention due to their enhanced properties such as fast operation speed, simple device …

In this paper, recent progress of binary metal–oxide resistive switching random access
memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical …

In this paper, we review the recent progress in the resistive random access memory
(ReRAM) technology, one of the most promising emerging nonvolatile memories, in which …

In order to realize the high density array device and suppress the disturbance between the
cells, ReRAM also seem to need a selective device same as a diode in PCRAM. Still, while …

The integration of novel materials has been pivotal in advancing Si-based devices ever
since Si became the preferred material for transistors, and later, integrated circuits. New …

The high demands of reducing power consumption for electronic applications and
decreasing the current and voltage range have increased the technological development of …

Scaling is a key issue for resistive switching (RS) memory before commercialization. In this
paper, for the first time, we reveal the impact of electrode diffusion on the device …

Transition metal-oxide resistive random-access memories seem to be a viable candidate as
the next-generation storage technology because transition metals have multiple oxidation …

Silicon oxide (SiO x 1< x≦ 2) has long been used and considered as a passive and
insulating component in the construction of electronic devices. In contrast, here the active …

Both low and high resistance states (which were written by voltage application in a local
region of NiO/Pt films using conducting atomic force microscopy [C-AFM]) were observed …