A comprehensive review of Single Event Transients on various MOS devices
PS Rajakumar, SS Kumar - IEEE Access, 2024 - ieeexplore.ieee.org
Due to the constant scaling of device sizes and the arrival of nanoscale technologies, Single-
Event Transients (SETs) are becoming an increasingly important problem in the design and …
Event Transients (SETs) are becoming an increasingly important problem in the design and …
Physics-based analytical formulation of the soft error rate in CMOS circuits
JL Autran, D Munteanu - IEEE Transactions on Nuclear Science, 2023 - ieeexplore.ieee.org
The exponential dependence of the soft error rate (SER) with critical charge in CMOS
circuits, empirically proposed by Hazucha and Svensson, is derived in the framework of the …
circuits, empirically proposed by Hazucha and Svensson, is derived in the framework of the …
Analysis of Guard-Gates on FF SEU Rates at a 12-nm FinFET Node
CJ Elash, J **ng, PP Momen… - … on Nuclear Science, 2025 - ieeexplore.ieee.org
This paper studies the Soft Error Rates (SER) of latches by using different delay lengths in
guard-gate based Flip-Flop (FF) designs at a 12-nm FinFET technology node. Three FFs are …
guard-gate based Flip-Flop (FF) designs at a 12-nm FinFET technology node. Three FFs are …
Self-correcting Flip-flops for Triple Modular Redundant Logic in a 12-nm Technology
LT Clark, A Duvnjak, C Young-Sciortino… - … on Circuits and …, 2022 - ieeexplore.ieee.org
Area efficient self-correcting flip-flops for use with triple modular redundant (TMR) soft-error
hardened logic are implemented in a 12-nm finFET process technology. The TMR flip-flop …
hardened logic are implemented in a 12-nm finFET process technology. The TMR flip-flop …
ASIC Flow for space radiation tolerant components on commercial process technologies—part 1 library validation
Many aerospace users of radiation hardened (RH) components have radiation performance
requirements that are relatively minor compared to traditional RH requirements. By relaxing …
requirements that are relatively minor compared to traditional RH requirements. By relaxing …
Machine Learning-Assisted Single-Event Transient Model of 12nm FinFETs for Circuit-Level Simulation
J Lin, L Cai, Y Chen, H Zhang… - 2023 IEEE 15th …, 2023 - ieeexplore.ieee.org
As the geometries of transistors continue to scale down, single-event transient (SET) are
becoming a major source of soft errors in circuit design. This paper proposes a machine …
becoming a major source of soft errors in circuit design. This paper proposes a machine …
Single-Event Effects in advanced CMOS technologies
V Pouget - European Conference on Radiation and its Effects on …, 2023 - hal.science
CMOS technologies continue to evolve with the promise of improved computation,
integration and power performances, while the diffusion of off-the-shelf components into …
integration and power performances, while the diffusion of off-the-shelf components into …
TCAD Calibrated SEE Fault Model Validated with Beam Results for a 12nm D Flip-Flop.
C YoungSciortino, J Neuendank… - … on Radiation and Its …, 2022 - ieeexplore.ieee.org
A simple simulation-based approach to accurately estimating the single even effect (SEE)
cross section of a standard cell library Flip-Flop is presented. A SPICE level model of charge …
cross section of a standard cell library Flip-Flop is presented. A SPICE level model of charge …