Plasmonic lasers attracted interest for their ability to generate coherent light in mode volume
smaller than the diffraction limit of photonic lasers. While nanoscale devices in one or two …

This paper focuses on the determination of the bandgap energy bowing parameter of
strained and relaxed InxGa_1− xN layers. Samples are grown by metal organic vapor phase …

We report InGaN/GaN light-emitting diodes (LED) comprising in situ integrated p+-
GaN/InGaN/n+-GaN polarization tunnel junctions. Improved current spreading and carrier …

The compliant behavior of high fill-factor 10× 10 μm 2 square patterned 60–140 nm thick
GaN-on-porous-GaN tiles was demonstrated by utilizing porous GaN as a semi-flexible …

The integration of Artificial Intelligence (AI) into supply chain management (SCM) has the
potential to revolutionize operational efficiency, decision-making, and cost-effectiveness …

Plasmon hybridization modes are observed in the extinction spectra of a metal–insulator–
metal (MIM) nanodisk array fabricated using nanospherical-lens lithography. Two distinct …

Fully or partially relaxed micron-sized InGaN patterns with fill factors up to 69% were
demonstrated via porosification of the underlying GaN: Si layer. The impact of the …

For an extended period, a technological architecture known as cloud IoT links IoT devices to
servers located in cloud data centers. Real-time data analytic are made possible by this …

Metamorphic (ie, linear composition graded) GaInN buffer layers with an increased in-plane
lattice parameter, grown by plasma-assisted molecular beam epitaxy, were used as …

The compliant behavior of densely packed 10× 10 µm2 square patterned InGaN layers on
top of porous GaN is demonstrated. The elastic relaxation of the InGaN layers is enabled by …