Since Stratton published his famous paper four decades ago, various transport models have
been proposed which account for the average carrier energy or temperature in one way or …

Starting with the simplest semiclassical approaches and ending with the description of
complex fully quantum-mechanical methods for quantum transport analysis of state-of-the …

We present a hierarchy of tunneling models suitable for the two-and three-dimensional
simulation of logic and nonvolatile semiconductor memory devices. The crucial modeling …

This work presents the impact of heavy ion irradiation on vertical-diffused metal-oxide-
semiconductor field-effect transistors (VDMOSFETs), particularly focusing on the ionization …

In this paper, we present an introduction to hydrodynamic-based simulation of
semiconductor devices. A very general approach is given to illustrate a mathematical …

We propose two different approaches to describe carrier transport in n-laterally diffused
MOS (nLDMOS) transistor and use the calculated carrier energy distribution as an input for …

The influence of the dust–ion collision effect on the propagation of ion–acoustic waves
(IAWs) in a collisional magnetized dusty plasma containing positive ions, dust grains with a …

A simple and efficient model for first-order simulation of the writing of n-channel erasable
programmable ROM (EPROM) cells is presented. It allows the current injected into the gate …

The shape of the hot electron distribution function in semiconductor devices is insufficiently
described using only the first four moments. We propose using six moments of the …

A two-dimensional device simulator which allows the complete transient simulation of
nonvolatile memories is presented. The simulator has been derived from HFIELDS and …