" Extreme environments" represents an important niche market for electronics and spans the
operation of electronic components in surroundings lying outside the domain of …

An extraordinary combination of material science, manufacturing processes, and innovative
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …

The first book to deal with the design and optimization of transistors made from strained
layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct …

The growth properties of β-SiC on (100) Si grown by rapid thermal chemical vapor
deposition, using a single precursor (methylsilane) without an initial surface carbonization …

The need to serve the explosion in data bandwidth demand for fixed and mobile
applications has driven transistor performance requirements beyond the reach of …

We review the emerging reliability issues associated with high-performance SiGe HBT
technologies which are being increasingly deployed in a wide variety of mixed-signal circuit …

A key problem faced by npn SiGe technology is the outdiffusion of boron from the SiGe base
caused by thermal annealing or transient enhanced diffusion. In this paper we investigate …

In this work, we demonstrate that the incorporation of carbon in the base of a npn Si/SiGe/Si
heterojunction bipolar transistor dramatically reduces the outdiffusion of boron from the base …

What seems routine today was not always so. The field of Si-based heterostructures rests
solidly on the shoulders of materials scientists and crystal growers, those purveyors of the …

Capacitance–voltage measurements have been used to study the effect of carbon on the
valence band offset of compressively strained Si 1− x− y Ge x C y/(100) Si heterojunctions …