The discovery of 2D layered MoSi2N4 and WSi2N4 without knowing their 3D parents by
chemical vapor deposition in 2020 has stimulated extensive studies of 2D MA2Z4 system …

Abstract 2D transition metal chalcogenide (TMDC) materials, such as MoS2, have recently
attracted considerable research interest in the context of their use in ultrascaled devices …

Abstract Two-dimensional (2D) semiconductors are promising channel materials for next-
generation field-effect transistors (FETs). However, it remains challenging to integrate …

Abstract Since Si‐based Moore's law is physically limited, 2D semiconductors are proposed
as successors to continue shrinking the transistor size for more Moore electronics. However …

The sustainable development of next‐generation device technology is paramount in the face
of climate change and the looming energy crisis. Tremendous effort is made in the discovery …

Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDs) with fascinating
electronic energy band structures, rich valley physical properties and strong spin–orbit …

Complementary metal‐oxide‐semiconductor (CMOS) field‐effect transistors (FETs) are the
key component of a chip. Bulk indium arsenide (InAs) owns nearly 30 times higher electron …

Two-dimensional (2D) semiconductors have attracted tremendous interest as natural
passivation and atomically thin channels could facilitate continued transistor scaling …

Recently, a novel two-dimensional (2D) MoSi2N4 has been successfully synthesized and
features high carrier mobility, moderate bandgap, and outstanding ambient stability (Science …

High-electron-mobility group III–V compounds have been regarded as a promising
successor to silicon in next-generation field-effect transistors (FETs). Gallium arsenide …