As Si has faced physical limits on further scaling down, novel semiconducting materials such
as 2D transition metal dichalcogenides and oxide semiconductors (OSs) have gained …

The development of high-performance oxide-based transistors is critical to enable very large-
scale integration (VLSI) of monolithic 3-D integrated circuit (IC) in complementary metal …

Thin film transistors (TFTs) as the core devices for displays, are widely used in various fields
including ultra-high-resolution displays, flexible displays, wearable electronic skins and …

A nanoscale vertical-channel thin film transistor (V-TFT) with a channel length shorter than
160 nm was fabricated and characterized, in which In–Ga–Zn–O (IGZO) and SiO2 thin films …

Implementing high-performance n-and p-type thin-film transistors (TFTs) for monolithic three-
dimensional (3D) integrated circuit (IC) and low-DC-power display is crucial. To achieve …

Adhesion lithography offers to fabrication of coplanar asymmetric nanogap electrodes with a
low‐cost and facile process. In this study, a gate‐tunable diode with coplanar asymmetric …

This study aimed to fabricate n-channel four-terminal (4 T) polycrystalline silicon (poly-Si)
vertical thin-film transistors (VTFTs) with submicron gate lengths on a glass substrate. The 4 …

This paper reports the effect of the properties of a back-channel region of a vertical thin-film
transistor (VTFT) on its electrical performance. The deposition of a thin layer of SiO 2 on a …

Vertical thin-film transistors (V-TFTs) with an InSnO-stabilized ZnO channel were fabricated.
The vertical architecture enables devices with submicron channel lengths (≤ 500 nm) to …

Ultraviolet (UV) detection is an important index, as UV rays can cause skin diseases in
humans. To enhance the performance of UV photodetectors, we fabricated palladium …