Efficiency droop, ie the loss of efficiency at high operating current, afflicts nitride‐based light‐
emitting diodes (LEDs). The droop phenomenon is currently the subject of intense research …

The paper reviews applications of ABC-model to interpret internal quantum efficiency and its
droop in III-nitride light-emitting diodes. Advantages of the model, its intrinsic limitations, and …

Nitride‐based light‐emitting diodes (LEDs) suffer from a reduction (droop) of the internal
quantum efficiency with increasing injection current. This droop phenomenon is currently the …

InGaN-based light-emitting diodes (LEDs) exhibit a significant efficiency loss (droop) when
operating at high injected carrier densities, the origin of which remains an open issue. Using …

In this paper, we report on the latest advancements in improving AlGaInN-based visible-light-
emitting-diode (LED) efficiency in epitaxy, chip, and package designs. We investigate the …

Efficiency droop in InGaN light-emitting diodes (LEDs) is analyzed based on the rate
equation model. By using the peak point of the efficiency versus current-density relation as …

The emergence of efficient solid state light emitters was the result of the remarkable
breakthroughs in the late 1980s and early 1990s in GaN-based materials and light emitting …

Nitride light-emitting diodes are a promising solution for efficient solid-state lighting, but their
performance at high power is affected by the efficiency-droop problem. Previous …

In recent years, there have been remarkable developments in halide perovskites, which are
used in highly efficient optoelectronic devices and exhibit intriguing materials physics …

The emergence of halide perovskites for photovoltaic applications has triggered great
interest in these materials for solid‐state light emission. Higher order electron–hole …