Investigation of RadFET response to X-ray and electron beams
The irradiation response of Radiation Sensing Field Effect Transistor (RadFET), also known
as MOSFET/pMOS dosimeter, to high energy X-rays and electron beams was investigated …
as MOSFET/pMOS dosimeter, to high energy X-rays and electron beams was investigated …
Response to ionizing radiation of different biased and stacked pMOS structures
Different low-cost commercial general-purpose MOSFETs and a RADFET are subjected to
ionizing photon beams for comparison. The main characteristics of the radiation response …
ionizing photon beams for comparison. The main characteristics of the radiation response …
Floating-gate MOS transistor with dynamic biasing as a radiation sensor
This paper describes the possibility of using an Electrically Programmable Analog Device
(EPAD) as a gamma radiation sensor. Zero-biased EPAD has the lowest fading and the …
(EPAD) as a gamma radiation sensor. Zero-biased EPAD has the lowest fading and the …
[HTML][HTML] The SPICE Modeling of a Radiation Sensor Based on a MOSFET with a Dielectric HfO2/SiO2 Double-Layer
M Marjanović, SD Ilić, S Veljković, N Mitrović, U Gurer… - Sensors, 2025 - mdpi.com
We report on a procedure for extracting the SPICE model parameters of a RADFET sensor
with a dielectric HfO2/SiO2 double-layer. RADFETs, traditionally fabricated as PMOS …
with a dielectric HfO2/SiO2 double-layer. RADFETs, traditionally fabricated as PMOS …
[HTML][HTML] Dielectric multilayers impact on radiation-induced charge accumulation in highly sensitive oxide field effect transistors
Radiation dosimetry is crucial in many fields where the exposure to ionizing radiation must
be precisely controlled to avoid health and environmental safety issues. Among solid state …
be precisely controlled to avoid health and environmental safety issues. Among solid state …
Sensitivity improvement of medical dosimeters using solution processed TIPS-Pentacene FETs
In this paper, we have explored the electrical and material properties of TIPS-Pentacene for
low doses of gamma irradiation. Interface trap/defect generation was studied post gamma …
low doses of gamma irradiation. Interface trap/defect generation was studied post gamma …
[HTML][HTML] Recharging process of commercial floating-gate MOS transistor in dosimetry application
We investigated the recharging process of commercial floating gate device (EPAD) during
the six different dose rates and ten irradiation cycles with the highest dose rate. Dose rate …
the six different dose rates and ten irradiation cycles with the highest dose rate. Dose rate …
Commercial p-channel power VDMOSFET as x-ray dosimeter
GS Ristić, SD Ilić, S Veljković, AS Jevtić, S Dimitrijević… - Electronics, 2022 - mdpi.com
The possibility of using commercial p-channel power vertical double-diffused metal-oxide-
semiconductor field-effect transistors (VDMOSFETs) as X-ray sensors is investigated in this …
semiconductor field-effect transistors (VDMOSFETs) as X-ray sensors is investigated in this …
Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress
S Veljković, N Mitrović, V Davidović… - Journal of Circuits …, 2022 - World Scientific
In this paper, the effects of successively applied static/pulsed negative bias temperature
(NBT) stress and irradiation on commercial p-channel power vertical double-diffused metal …
(NBT) stress and irradiation on commercial p-channel power vertical double-diffused metal …
Radiation sensitive detector based on field-effect transistors
IM Vikulin, VE Gorbachev, AA Nazarenko - … and Communications Systems, 2017 - Springer
The possibility of develo** radiation detectors based on field-effect transistors (FET) is
investigated. Transistor saturation current is chosen as an informative parameter for …
investigated. Transistor saturation current is chosen as an informative parameter for …