Do** engineering and functionalization of two-dimensional metal chalcogenides
Two-dimensional (2D) layered metal chalcogenides (MXs) have significant potential for use
in flexible transistors, optoelectronics, sensing and memory devices beyond the state-of-the …
in flexible transistors, optoelectronics, sensing and memory devices beyond the state-of-the …
Novel Z-Scheme ZnIn2S4-based photocatalysts for solar-driven environmental and energy applications: Progress and perspectives
Benefiting from strong redox ability, improved charge transport, and enhanced charge
separation, Z-scheme heterostructures of ZnIn 2 S 4 based photocatalysts have received …
separation, Z-scheme heterostructures of ZnIn 2 S 4 based photocatalysts have received …
Stabilizing n‐Type Cubic GeSe by Entropy‐Driven Alloying of AgBiSe2: Ultralow Thermal Conductivity and Promising Thermoelectric Performance
The realization of n‐type Ge chalcogenides is elusive owing to intrinsic Ge vacancies that
make them p‐type semiconductors. GeSe crystallizes into a layered orthorhombic structure …
make them p‐type semiconductors. GeSe crystallizes into a layered orthorhombic structure …
Accurate and efficient molecular dynamics based on machine learning and non von Neumann architecture
P Mo, C Li, D Zhao, Y Zhang, M Shi, J Li… - npj Computational …, 2022 - nature.com
Force field-based classical molecular dynamics (CMD) is efficient but its potential energy
surface (PES) prediction error can be very large. Density functional theory (DFT)-based ab …
surface (PES) prediction error can be very large. Density functional theory (DFT)-based ab …
Tunable lattice dynamics and dielectric functions of two-dimensional Bi 2 O 2 Se: striking layer and temperature dependent effects
Y Li, K Dai, L Gao, J Zhang, A Cui, K Jiang, Y Li… - Nanoscale, 2023 - pubs.rsc.org
Two-dimensional (2D) Bi2O2Se semiconductors with a narrow band gap and ultrahigh
mobility have been regarded as an emerging candidate for optoelectronic devices, whereas …
mobility have been regarded as an emerging candidate for optoelectronic devices, whereas …
High-throughput physical vapour deposition flexible thermoelectric generators
Flexible thermoelectric generators (TEGs) can provide uninterrupted, green energy from
body-heat, overcoming bulky battery configurations that limit the wearable-technologies …
body-heat, overcoming bulky battery configurations that limit the wearable-technologies …
Conversion of p–n conduction type by spinodal decomposition in Zn-Sb-Bi phase-change alloys
Phase-change films with multiple resistance levels are promising for increasing the storage
density in phase-change memory technology. Diffusion-dominated Zn2Sb3 films undergo …
density in phase-change memory technology. Diffusion-dominated Zn2Sb3 films undergo …
Versatile direct-writing of dopants in a solid state host through recoil implantation
Modifying material properties at the nanoscale is crucially important for devices in nano-
electronics, nanophotonics and quantum information. Optically active defects in wide band …
electronics, nanophotonics and quantum information. Optically active defects in wide band …
Oxygen tuned local structure and phase-change performance of germanium telluride
The effect of oxygen on the local structure of Ge atoms in GeTe-O materials has been
investigated. Oxygen leads to a significant modification to the vibrational modes of Ge …
investigated. Oxygen leads to a significant modification to the vibrational modes of Ge …
Charge transport in pure and stabilized amorphous selenium: re-examination of the density of states distribution in the mobility gap and the role of defects
S Kasap, C Koughia, J Berashevich… - Journal of Materials …, 2015 - Springer
We re-examine electron and hole transport in pure and stabilized amorphous selenium (a-
Se) and attempt to construct a DOS distribution in the mobility gap below E c and above E v …
Se) and attempt to construct a DOS distribution in the mobility gap below E c and above E v …