Ferroelectric memory is a promising candidate for next‐generation nonvolatile memory
owing to its outstanding performance such as low power consumption, fast speed, and high …

The AI and IoT era requires software and hardware capable of efficiently processing
massive amounts data quickly and at a low cost. However, there are bottlenecks in existing …

Precise control of the conductivity of layered ferroelectric semiconductors is required to
make these materials suitable for advanced transistor, memory and logic circuits. Although …

Conventional computing based on von Neumann architecture cannot satisfy the demands of
artificial intelligence (AI) applications anymore. Neuromorphic computing, emulating …

In-memory computing is an attractive alternative for handling data-intensive tasks as it
employs parallel processing without the need for data transfer. Nevertheless, it necessitates …

A ferroelectric semiconductor junction is a promising two-terminal ferroelectric device for
nonvolatile memory and neuromorphic computing applications. In this work, we propose and …

Realization of multi-functional synaptic devices is imperative to deploy high-performance
brain-like vision systems. Here, a junction field-effect transistor based on a two-dimensional …

Pseudo-crossbar arrays using ferroelectric field effect transistor (FEFET) mitigates weight
movement and allows in situ vector–matrix multiplication (VMM), which can significantly …

Atomically thin two-dimensional (2D) van der Waals materials have exhibited many exotic
layer-dependent physical properties including electronic structure, magnetic order, etc …

Computing in memory (CIM) breaks the conventional von Neumann bottleneck through in
situ processing. Monolithic integration of digital and analog CIM hardware, ensuring both …