A low temperature nickel process has been developed that produces Ohmic contacts to n-
type germanium with specific contact resistivities down to (2.3±1.8)× 10− 7 Ω-cm 2 for …

The Ni monosilicide alloyed with Pt is widely used as contact material in advanced
microelectronics devices and a good knowledge of silicide formation kinetics is required for …

In this study, we report on the formation of a single-crystalline Ni 2 Ge/Ge/Ni 2 Ge nanowire
heterostructure and its field effect characteristics by controlled reaction between a …

The long-term joint reliability of SiC power devices bonded on a ceramic substrate metalized
with copper (Cu) and electroless nickel-phosphorus [Ni (P)] using a gold-germanium (Au …

The thermally induced solid-state reaction between a 10-nm-thick Ni film and a Si (001)
substrate was investigated using in situ x-ray diffraction and ex situ pole figure analyses. The …

The reaction of a Ni 0.9 Pt 0.1 7 nm-thick thin film with the underlying Si (001) substrate as a
function of the annealing temperature was studied using in situ XRD techniques as well as …

We have investigated the reactions of thin Ni films on Ge-on-Si substrates with patterned
structures. For rapid thermal anneals (RTAs) hotter than, an undesirable growth mode is …

Metallic silicides have been used as contact materials on source/drain and gate in metal‐
oxide semiconductor (MOS) structure for 40 years. Since the 65 nm technology node, NiSi is …

Platinum (Pt) and titanium (Ti) Schottky barrier diodes were fabricated on bulk grown (100)
Sb-doped n-type germanium using the electron beam whereas nickel (Ni) contacts were …

The thermal stability of NiGe films formed on epitaxial Ge on Si substrates was improved
from 450 to 550 C by simply adding an ultrathin (∼ 1 nm) Ti layer during Ni deposition …