Nanoionic memristive phenomena in metal oxides: the valence change mechanism

R Dittmann, S Menzel, R Waser - Advances in Physics, 2021 - Taylor & Francis
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …

Memristive devices for computing

JJ Yang, DB Strukov, DR Stewart - Nature nanotechnology, 2013 - nature.com
Memristive devices are electrical resistance switches that can retain a state of internal
resistance based on the history of applied voltage and current. These devices can store and …

[BOK][B] Resistive switching: from fundamentals of nanoionic redox processes to memristive device applications

D Ielmini, R Waser - 2015 - books.google.com
With its comprehensive coverage, this reference introduces readers to the wide topic of
resistance switching, providing the knowledge, tools, and methods needed to understand …

[HTML][HTML] Resistive switching phenomena: A review of statistical physics approaches

JS Lee, S Lee, TW Noh - Applied Physics Reviews, 2015 - pubs.aip.org
Resistive switching (RS) phenomena are reversible changes in the metastable resistance
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …

Metal–oxide RRAM

HSP Wong, HY Lee, S Yu, YS Chen, Y Wu… - Proceedings of the …, 2012 - ieeexplore.ieee.org
In this paper, recent progress of binary metal–oxide resistive switching random access
memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical …

Emerging memories: resistive switching mechanisms and current status

DS Jeong, R Thomas, RS Katiyar… - Reports on progress …, 2012 - iopscience.iop.org
The resistance switching behaviour of several materials has recently attracted considerable
attention for its application in non-volatile memory (NVM) devices, popularly described as …

Nonvolatile memory materials for neuromorphic intelligent machines

DS Jeong, CS Hwang - Advanced Materials, 2018 - Wiley Online Library
Recent progress in deep learning extends the capability of artificial intelligence to various
practical tasks, making the deep neural network (DNN) an extremely versatile hypothesis …

Redox-Based Resistive Switching Memories-Nanoionic Mechanisms, Prospects, and Challenges.

R Waser, R Dittmann, G Staikov… - … Materials (Deerfield Beach …, 2009 - europepmc.org
This review article introduces resistive switching processes that are being considered for
nanoelectronic nonvolatile memories. The three main classes are based on an …

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

DH Kwon, KM Kim, JH Jang, JM Jeon, MH Lee… - Nature …, 2010 - nature.com
Resistance switching in metal oxides could form the basis for next-generation non-volatile
memory. It has been argued that the current in the high-conductivity state of several …

Resistive random access memory (ReRAM) based on metal oxides

H Akinaga, H Shima - Proceedings of the IEEE, 2010 - ieeexplore.ieee.org
In this paper, we review the recent progress in the resistive random access memory
(ReRAM) technology, one of the most promising emerging nonvolatile memories, in which …