Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power
electronics with capabilities beyond existing technologies due to its large bandgap …

We have demonstrated a β-Ga 2 O 3 metal-semiconductor field-effect transistor (MESFET)
with a high off-state breakdown voltage (344 V), based on a quasi-two-dimensional β-Ga 2 …

AlGaN/GaN HEMTs with several different designs of field plate structure are studied for
device optimization purposes. To increase device breakdown voltage, optimal dimensions of …

This paper focuses on the time-dependent breakdown of the AlGaN/GaN Schottky barrier
diodes with a gated edge termination (GET) submitted to high-voltage stress. The impact of …

The gate leakage characteristics of n-GaN-and i-GaN-capped AlGaN/GaN high-electron-
mobility transistor (HEMT) heterostructures grown on various substrates of Si, SiC, and GaN …

In this work, we studied the mechanisms and switching properties of AlGaN/GaN high-
electron-mobility-transistors (HEMTs) passivated by amorphous-SiN x and monocrystal-like …

In this paper, study on the heat transfer of GaN-based high electron mobility transistors
(HEMTs) on SiC substrate was carried out utilizing transient thermal analysis method. Gate …

Variation of gate sidewall angle in V-shaped gate HEMTs impacts the device electrical
performance, including self-heating effects, high-frequency operation and the breakdown …

The proposed research work investigated a 3-step gate field plated heterojunction FET or
high electron mobility transistor (HEMT) based on AIGaN/GaN material system. The …

This article presents analytical noise equivalent circuit model for analysis and
characterization of novel field plated dual channel dual material gate (DCDMG) AlGaN/GaN …