Our recent work on the electronic and optical properties of semiconductor and graphene
quantum dots is reviewed. For strained self-assembled InAs quantum dots on GaAs or InP …

Strong spin-orbit interactions make hole quantum dots central to the quest for electrical spin
qubit manipulation enabling fast, low-power, scalable quantum computation. Yet it is …

A novel spintronic nanodevice is proposed that is able to manipulate the single heavy-hole
spin state in a coherent manner. It can act as a single quantum logic gate. The heavy-hole …

We study the exchange interaction between two hole-spin qubits in a double quantum dot
setup in a silicon nanowire in the presence of magnetic and electric fields. Based on …

Spin-orbit coupling is key to all-electrical control of quantum-dot spin qubits, and is often
much stronger for holes than for electrons. The recent development of high-quality hole …

The complex structure of the valence band in many semiconductors leads to multifaceted
and unusual properties for spin-3/2 hole systems compared to common spin-1/2 electron …

We study the effect of valence band spin–orbit interactions (SOI) on the acoustic phonon-
assisted spin relaxation of holes confined in quantum dots (QDs). Heavy hole–light hole (hh …

We theoretically investigate the energy spectrum and electronic structure of two vertically
stacked Ge/Si quantum dots loaded with a pair of interacting holes, and study the …

Using four-band k⋅ p Hamiltonians, we study how biaxial strain and position-dependent
effective masses influence hole tunneling in vertically coupled InAs/GaAs quantum dots …

We study theoretically phonon-assisted relaxation and inelastic tunneling of holes in a
double quantum dot. We derive hole states and relaxation rates from k· p Hamiltonians and …