Sub-10 nm two-dimensional transistors: Theory and experiment
Presently Si-based field-effect transistors (FETs) are approaching their physical limit, and
further scaling their gate length down to the sub-10 nm region is becoming extremely …
further scaling their gate length down to the sub-10 nm region is becoming extremely …
Hierarchical materials from high information content macromolecular building blocks: construction, dynamic interventions, and prediction
Hierarchical materials that exhibit order over multiple length scales are ubiquitous in nature.
Because hierarchy gives rise to unique properties and functions, many have sought …
Because hierarchy gives rise to unique properties and functions, many have sought …
Ultrabroadband imaging based on wafer‐scale tellurene
High‐resolution imaging is at the heart of the revolutionary breakthroughs of intelligent
technologies, and it is established as an important approach toward high‐sensitivity …
technologies, and it is established as an important approach toward high‐sensitivity …
Gate dielectrics integration for 2D electronics: challenges, advances, and outlook
Abstract 2D semiconductors have emerged both as an ideal platform for fundamental
studies and as promising channel materials in beyond‐silicon field‐effect‐transistors due to …
studies and as promising channel materials in beyond‐silicon field‐effect‐transistors due to …
The resurrection of tellurium as an elemental two-dimensional semiconductor
The graphene boom has triggered a widespread search for novel elemental van der Waals
materials thanks to their simplicity for theoretical modeling and easy access for material …
materials thanks to their simplicity for theoretical modeling and easy access for material …
Enhanced photothermoelectric conversion in self-rolled tellurium photodetector with geometry-induced energy localization
Photodetection has attracted significant attention for information transmission. While the
implementation relies primarily on the photonic detectors, they are predominantly …
implementation relies primarily on the photonic detectors, they are predominantly …
Advances in synthesis and applications of boron nitride nanotubes: A review
T Xu, K Zhang, Q Cai, N Wang, L Wu, Q He… - Chemical Engineering …, 2022 - Elsevier
Boron nitride nanotubes (BNNTs) have attracted worldwide research interest since 1995
due to their excellent properties and a wide range of applications in numerous fields. The …
due to their excellent properties and a wide range of applications in numerous fields. The …
Van der Waals nanomesh electronics on arbitrary surfaces
Chemical bonds, including covalent and ionic bonds, endow semiconductors with stable
electronic configurations but also impose constraints on their synthesis and lattice …
electronic configurations but also impose constraints on their synthesis and lattice …
Growth of high-quality semiconducting tellurium films for high-performance p-channel field-effect transistors with wafer-scale uniformity
Achieving high-performance p-type semiconductors has been considered one of the most
challenging tasks for three-dimensional vertically integrated nanoelectronics. Although …
challenging tasks for three-dimensional vertically integrated nanoelectronics. Although …
Atomic layer deposition route to scalable, electronic-grade van der Waals Te thin films
Scalable production and integration techniques for van der Waals (vdW) layered materials
are vital for their implementation in next-generation nanoelectronics. Among available …
are vital for their implementation in next-generation nanoelectronics. Among available …