Van der Waals contact for two-dimensional transition metal dichalcogenides

L Ma, Y Wang, Y Liu - Chemical Reviews, 2024‏ - ACS Publications
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have emerged as highly
promising candidates for next-generation electronics owing to their atomically thin structures …

2D Ferroelectrics and ferroelectrics with 2D: Materials and device prospects

C Leblanc, S Song, D Jariwala - Current Opinion in Solid State and …, 2024‏ - Elsevier
Ferroelectric and two-dimensional (2D) materials are both heavily investigated classes of
electronic materials. This is unsurprising since they both have superlative fundamental …

Fermi‐Level Pinning‐Free WSe2 Transistors via 2D Van der Waals Metal Contacts and Their Circuits

J Jang, HS Ra, J Ahn, TW Kim, SH Song… - Advanced …, 2022‏ - Wiley Online Library
Precise control over the polarity of transistors is a key necessity for the construction of
complementary metal–oxide–semiconductor circuits. However, the polarity control of 2D …

Wafer-scale production of patterned transition metal ditelluride layers for two-dimensional metal–semiconductor contacts at the Schottky–Mott limit

S Song, Y Sim, SY Kim, JH Kim, I Oh, W Na, DH Lee… - Nature …, 2020‏ - nature.com
A key challenge in the development of two-dimensional (2D) devices is the fabrication of
metal–semiconductor junctions with minimal contact resistance and depinned energy levels …

[HTML][HTML] Metal–organic chemical vapor deposition of 2D van der Waals materials—The challenges and the extensive future opportunities

DH Lee, Y Sim, J Wang, SY Kwon - Apl Materials, 2020‏ - pubs.aip.org
The last decade has witnessed significant progress in two-dimensional van der Waals (2D
vdW) materials research; however, a number of challenges remain for their practical …

Atomic transistors based on seamless lateral metal-semiconductor junctions with a sub-1-nm transfer length

S Song, A Yoon, JK Ha, J Yang, S Jang… - Nature …, 2022‏ - nature.com
The edge-to-edge connected metal-semiconductor junction (MSJ) for two-dimensional (2D)
transistors has the potential to reduce the contact length while improving the performance of …

Lowering the Schottky Barrier Height by Quasi-van der Waals Contacts for High-Performance p-Type MoTe2 Field-Effect Transistors

Z Yang, X Peng, J Wang, J Lin, C Zhang… - … Applied Materials & …, 2024‏ - ACS Publications
Two-dimensional (2D) transition-metal dichalcogenides (TMDs) offer advantages over
traditional silicon in future electronics but are hampered by the prominent high contact …

Patterning of type-II Dirac semimetal PtTe2 for optimized interface of tellurene optoelectronic device

DA Nguyen, DY Park, J Lee, NT Duong, C Park… - Nano Energy, 2021‏ - Elsevier
The controllable transformation between the semiconductor and metal plays a key role for
the electronic and optoelectronic applications of atomically thin two-dimensional (2D) …

Machine Learning Driven Synthesis of Few-Layered WTe2 with Geometrical Control

M Xu, B Tang, Y Lu, C Zhu, Q Lu, C Zhu… - Journal of the …, 2021‏ - ACS Publications
Reducing the lateral scale of two-dimensional (2D) materials to one-dimensional (1D) has
attracted substantial research interest not only to achieve competitive electronic applications …

Spatially controlled two-dimensional quantum heterostructures

G Kim, S Song, D Jariwala - Materials Research Letters, 2023‏ - Taylor & Francis
Two-dimensional (2D) heterostructures have recently attracted interest as candidate
materials for classical optoelectronics and in quantum information technology. Despite …